SiC MOSFET SiC MOSFET Diode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L Pb RoHS LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET Product Summary Characteristics Value Unit V 1700 V DS Typical R 750 m DS(ON) I ( T 100 C) 3.5 A D C Circuit Diagram TO-247-3L Features Optimiz ed for high- Normally -off operation at frequency, high-efficiency all temperatures applications Ultra-low on-resistance Extremely lo w gate charge and output capacitance L ow gate resistance for * high-frequency switching * Body diode 1 2 3 Environmental Applications High-frequency Motor Driv es Littelfuse RoHS logo = RoHS applications RoHS conform High Voltage DC/DC Solar In verters Converters Lit telfuse HF logo = Halogen Free Switch Mode Power Battery Chargers Supplies Pb Littelfuse Pb-free logo = Induction Heating Pb-free lead plating UPS 2018 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.3, Revised: 07/16/18SiC MOSFET SiC MOSFET Diode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L Maximum Ratings Characteristics Symbol Conditions Value Unit 5.0 V = 20 V, T = 25 C GS C Continuous Drain Current A I D 3.5 V = 20 V, T = 100 C GS C 1 Pulsed Drain Current I T = 25 C 15 A D(pulse) C Power Dissipation 54 W P T = 25 C, T = 150 C D C J Operating Junction Temperature -55 to 150 C T J -6 to 22 V Absolute maximum values GS,MAX Gate-source Voltage V Transient, <1% duty cycle -10 to 25 V GS,OP,TR -5 to 20 V Recommended DC operating values GS,OP Storage Temperature T - -55 to 150 C STG Lead Temperature for Soldering T - 260 C sold 0.6 Nm Mounting Torque M M3 or 6-32 screw D 5.3 in-lb Footnote 1: Pulse width limited by T J,max Thermal Characteristics Characteristics Symbol max Unit Maximum Thermal Resistance, junction-to-case 2.3 C/W R JC Maximum Thermal Resistance, junction-to-ambient 40 C/W R JA Electrical Characteristics (T = 25 C unless otherwise specified) J Characteristics Symbol Conditions Min Typ Max Unit Static Characteristics Drain-source Breakdown Voltage 1700 - - V V V = 0 V, I = 250 A (BR)DSS GS D V = 1700 V, V = 0 V - 0.05 10 DS GS Zero Gate Voltage Drain Current A I DSS - 0.10 - V = 1700 V, V = 0 V, T = 150 C DS GS J - - 100 I V = 22 V, V = 0 V GSS,F GS DS Gate Leakage Current nA I V = -6 V, V = 0 V - - 100 GSS,R GS DS - 750 1000 I = 2 A, V = 20 V D GS Drain-source On-state Resistance R I = 2 A, V = 15 V - 1000 - m DS(ON) D GS - 1450 - I = 2 A, V = 20 V, T = 150 C D GS J 1.8 2.5 4.0 V = V , I = 1 mA DS GS D Gate Threshold Voltage V V GS,(th) V = V , I = 1 mA, T = 150 C - 1.6 - DS GS D J Gate Resistance R Resonance method, Drain-Source shorted - 5.8 - G 2018 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.3, Revised: 07/16/18