STD10NF30 STMicroelectronics

STD10NF30 Datasheet Automotive-grade N-channel 300 V, 0.28 typ., 10 A, MESH OVERLAY Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD10NF30 300 V 0.33 10 A 3 2 1 DPAK AEC-Q101 qualified 100% avalanche tested D(2, TAB) Low capacitance and gate charge 175 C maximum junction temperature Applications G(1) Switching applications Description S(3) AM01475v1 noZen This fully clamped MOSFET is produced using STs latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions, such as those encountered in the automotive environment. The device is also well-suited for other applications where extra ruggedness is required. Product status link STD10NF30 Product summary Order code STD10NF30 Marking 10NF30 Package DPAK Packing Tape and reel DS10271 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD10NF30 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 300 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 10 A C I D Drain current (continuous) at T = 100 C 6.3 A C (1) I Drain current (pulsed) 40 A DM P Total dissipation at T = 25 C 103 W TOT C (2) dv/dt . Peak diode recovery voltage slope 12 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 10 A, di/dt 200 A/s, V = 80% V SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.45 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 6 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 175 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10271 - Rev 2 page 2/16