X-On Electronics has gained recognition as a prominent supplier of STD10NF30 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD10NF30 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD10NF30 STMicroelectronics

STD10NF30 electronic component of STMicroelectronics
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Part No.STD10NF30
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY Power MOSFET in a DPAK package
Datasheet: STD10NF30 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7447 ea
Line Total: USD 1.74 
Availability - 1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.7447
10 : USD 1.6111
30 : USD 1.5284
100 : USD 1.4429
500 : USD 1.2872
1000 : USD 1.2706

   
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We are delighted to provide the STD10NF30 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD10NF30 and other electronic components in the MOSFETs category and beyond.

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STD10NF30 Datasheet Automotive-grade N-channel 300 V, 0.28 typ., 10 A, MESH OVERLAY Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD10NF30 300 V 0.33 10 A 3 2 1 DPAK AEC-Q101 qualified 100% avalanche tested D(2, TAB) Low capacitance and gate charge 175 C maximum junction temperature Applications G(1) Switching applications Description S(3) AM01475v1 noZen This fully clamped MOSFET is produced using STs latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions, such as those encountered in the automotive environment. The device is also well-suited for other applications where extra ruggedness is required. Product status link STD10NF30 Product summary Order code STD10NF30 Marking 10NF30 Package DPAK Packing Tape and reel DS10271 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD10NF30 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 300 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 10 A C I D Drain current (continuous) at T = 100 C 6.3 A C (1) I Drain current (pulsed) 40 A DM P Total dissipation at T = 25 C 103 W TOT C (2) dv/dt . Peak diode recovery voltage slope 12 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 10 A, di/dt 200 A/s, V = 80% V SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.45 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 6 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 175 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10271 - Rev 2 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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