STB27NM60ND STMicroelectronics

STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 , 21 A FDmesh II 2 Power MOSFETs (with fast diode) in D PAK and TO-247 packages Datasheet - production data Features Order codes V T R max I DS jmax DS(on) D STB27NM60ND TAB 650 V 0.16 21 A STW27NM60ND Designed for automotive applications and 3 3 2 1 AEC-Q101 qualified 1 2 D PAK The worldwide best R *area amongst the TO-247 DS(on) fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Extremely high dv/dt and avalanche capabilities 4 Applications Switching applications Description These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced 3 using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature - V extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging STB27NM60ND 27NM60ND DPAK Tape and reel STW27NM60ND 27NM60ND TO-247 Tube October 2013 DocID15406 Rev 4 1/19 This is information on a product in full production. www.st.comContents STB27NM60ND, STW27NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packing mechanical data 16 6 Revision history . 18 2/19 DocID15406 Rev 4