STB32N65M5 STMicroelectronics

STB32N65M5 Datasheet N-channel 650 V, 95 m typ., 24 A MDmesh M5 Power MOSFET in DPAK package Features TAB V at T R max. I Order codes DS jmax. DS(on) D STB32N65M5 710 V 119 m 24 A 2 3 Extremely low R DS(on) 1 Low gate charge and input capacitance Excellent switching performance DPAK 100% avalanche tested D(2, TAB) Applications Switching applications Description G(1) This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly S(3) suitable for applications requiring high power and superior efficiency. AM01475v1 noZen Product status link STB32N65M5 Product summary Order code STB32N65M5 Marking 32N65M5 2 Package D PAK Packing Tape and reel DS6032 - Rev 5 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB32N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 24 A D C I Drain current (continuous) at T = 100 C 15 A D C (1) I Drain current (pulsed) 96 A DM P Total power dissipation at T = 25 C 150 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 24 A, di/dt 400 A/s, V V . SD DS(peak) (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.83 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 8 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 650 mJ AS j D AR DD DS6032 - Rev 5 page 2/17