STB24NM65N STMicroelectronics

STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N 2 N-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D PAK 2 I PAK - TO-247 second generation MDmesh Power MOSFET Features V DSS Type R max I DS(on) D ( T max) J 3 2 3 1 2 1 STB24NM65N 710 V < 0.19 19 A IPAK TO-220 STI24NM65N 710 V < 0.19 19 A (1) STF24NM65N 710 V < 0.19 19 A 3 1 STP24NM65N 710 V < 0.19 19 A DPAK STW24NM65N 710 V < 0.19 19 A 3 3 1. Limited only by maximum temperature allowed 2 2 1 1 TO-220FP 100% avalanche tested TO-247 Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications Description This series of devices is designed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB24NM65N 24NM65N DPAK Tape and reel STI24NM65N 24NM65N IPAK Tube STF24NM65N 24NM65N TO-220FP Tube STP24NM65N 24NM65N TO-220 Tube STW24NM65N 24NM65N TO-247 Tube February 2008 Rev 1 1/19 www.st.com 19Contents STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 17 2/19