STB25NM60ND STMicroelectronics

STx25NM60ND N-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFET 2 (with fast diode) in D PAK, TO-220FP, TO-220, TO-247 Features TAB V DSS Type R max I DS(on) D T JMAX 3 1 3 STB25NM60ND 21 A 2 1 2 D PAK (1) STF25NM60ND 21 A TO-220FP 650 V 0.16 TAB STP25NM60ND 21 A STW25NM60ND 21 A 1. Limited only by maximum temperature allowed 3 2 3 1 2 The worldwide best R *area amongst the DS(on) 1 TO-220 fast recovery diode devices TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Extremely high dv/dt and avalanche capabilities 4 Application Switching applications Description These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced 3 using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature - V extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB25NM60ND 25NM60ND DPAK Tape and reel STF25NM60ND 25NM60ND TO-220FP Tube STP25NM60ND 25NM60ND TO-220 Tube STW25NM60ND 25NM60ND TO-247 Tube November 2011 Doc ID 14167 Rev 5 1/21 www.st.com 21Contents STx25NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packing mechanical data 18 6 Revision history . 20 2/21 Doc ID 14167 Rev 5