X-On Electronics has gained recognition as a prominent supplier of STB24N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB24N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB24N60M2 STMicroelectronics

STB24N60M2 electronic component of STMicroelectronics
STB24N60M2 STMicroelectronics
STB24N60M2 MOSFETs
STB24N60M2  Semiconductors

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See Product Specifications
Part No. STB24N60M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2
Datasheet: STB24N60M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.3844 ea
Line Total: USD 1384.4 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1000
Multiples : 1000
1000 : USD 1.6413

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 2.7961
10 : USD 2.4705
25 : USD 2.2546
100 : USD 2.2314
250 : USD 2.1026
500 : USD 2.1026
1000 : USD 2.1026

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1000
Multiples : 1000
1000 : USD 3.1909

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 6.0437
10 : USD 5.2311
100 : USD 4.2859
500 : USD 3.6484

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 6.0437
10 : USD 5.2311
100 : USD 4.2859
500 : USD 3.6484

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1000
Multiples : 1000
1000 : USD 1.3844
2000 : USD 1.371
3000 : USD 1.371
4000 : USD 1.3575

0
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 5.5644
10 : USD 5.4417
30 : USD 5.3606
100 : USD 5.2793

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 8.1222
10 : USD 2.918
25 : USD 2.7676

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 6
Multiples : 1
6 : USD 1.5213
10 : USD 1.4605

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1000
Multiples : 1000
1000 : USD 1.7344

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Tradename
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB24N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB24N60M2 and other electronic components in the MOSFETs category and beyond.

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The STB24N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics, featuring a maximum continuous drain-source voltage of 600V, a maximum gate-source voltage of 20V, and a maximum drain current of 18A. It is part of the MDmesh M2 series of MOSFETs, which offer superior power switching performance for various applications. This transistor has a low on-resistance of 0.168O and a fast intrinsic gate switching speed which makes it suitable for use in high-performance switching circuits. The device also features a rugged gate oxide design for protection against cathode stripping, a self-aligned double-diffused (SAD) technology for very low gate input capacitance, and a small form factor that allows for easy implementation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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