SQ2364EES
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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 C MOSFET
FEATURES
SOT-23 (TO-236)
TrenchFET power MOSFET
D
AEC-Q101 qualified
3
100 % Rg and UIS tested
Typical ESD protection 800 V
Material categorization:
2
for definitions of compliance please see
S
www.vishay.com/doc?99912
1
D
G
Top View
PRODUCT SUMMARY
G
V (V) 60
DS
R ( ) at V = 1.5 V 0.245
DS(on) GS
I (A) 4
D
Configuration Single
N-Channel MOSFET
Package SOT-23
S
Marking code: 9Jxxx
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-source voltage V 60
DS
V
Gate-source voltage V 8
GS
T = 25 C 2
C
Continuous drain current I
D
T = 125 C 1.3
C
Continuous source current (diode conduction) I 2 A
S
a
Pulsed drain current I 8
DM
Single pulse avalanche current I 5
AS
L = 0.1 mH
Single pulse avalanche energy E 1.25 mJ
AS
T = 25 C 3
C
a
Maximum power dissipation P W
D
T = 125 C 1
C
Operating junction and storage temperature range T , T -55 to +175 C
J stg
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLLIMITUNIT
b
Junction-to-ambient PCB mount R 166
thJA
C/W
Junction-to-foot (drain) R 50
thJF
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
S18-0135-Rev. A, 29-Jan-18 Document Number: 75975
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2364EES
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V V = 0, I = 250 A 60 - -
DS GS D
V
Gate-source threshold voltage V V = V , I = 250 A 0.46 0.6 1
GS(th) DS GS D
V = 0 V, V = 3 V - - 100 nA
DS GS
Gate-source leakage I
GSS
V = 0 V, V = 8 V - - 5.5
DS GS
V = 0 V V = 60 V - - 1
GS DS
A
Zero gate voltage drain current I V = 0 V V = 60 V, T = 125 C - - 50
DSS GS DS J
V = 0 V V = 60 V, T = 175 C - - 150
GS DS J
a
On-state drain current I V = 4.5 V V 5 V 2 - - A
D(on) GS DS
V = 4.5 V I = 2 A, T = 25 C - 0.190 0.240
GS D J
V = 4.5 V I = 2 A, T = 125 C - - 0.460
GS D J
a
Drain-source on-state resistance R
DS(on)
V = 4.5 V I = 2 A, T = 175 C - - 0.600
GS D J
V = 1.5 V I = 2 A - 0.195 0.245
GS D
b
Forward transconductance g V = -15 V, I = 1 A - 8.8 - S
fs DS D
b
Dynamic
Input capacitance C - 263 330
iss
Output capacitance C V = 0 V V = 25 V, f = 1 MHz -28 35 pF
oss GS DS
Reverse transfer capacitance C -15 19
rss
c
Total gate charge Q -2 2.5
g
c
Gate-source charge Q V = 4.5 V V = 30 V, I = 1.5 A -0.3 - nC
gs GS DS D
c
Gate-drain charge Q -0.6 -
gd
Gate resistance R f = 1 MHz 2.5 4.1 6.6
g
c
Turn-on delay time t -6 7.2
d(on)
c
Rise time t -11 14
r
V = 30 V, R = 15
DD L
ns
c
I 1.5 A, V = 10 V, R = 1
Turn-off delay time t D GEN g -26 32
d(off)
c
Fall time t -13 16
f
b
Source-Drain Diode Ratings and Characteristics
a
Pulsed current I -- 8 A
SM
Forward voltage V I = 2 A, V = 0 - 0.8 1.2 V
SD F GS
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
S18-0135-Rev. A, 29-Jan-18 Document Number: 75975
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000