HEXFET Power MOSFET V 75 V DS R DS(on) max 8.5 m ( V = 10V) GS Q 48 g (typical) nC R 0.6 G (typical) I D 75 A PQFN 5X6 mm ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 8.5m) Lower Conduction Losses Low Thermal Resistance to PCB (< 1.2C/W) Enables better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH7107TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7107TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 75 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 14 D A GS I T = 70C Continuous Drain Current, V 10V 11 D A GS I T = 25C Continuous Drain Current, V 10V 75 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 47 D C(Bottom) GS Pulsed Drain Current I 300 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 104 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 6.9 8.5 V = 10V, I = 45A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 100 A DS GS D V Gate Threshold Voltage Coefficient -8.7 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 75V, V = 0V DSS DS GS A 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 68 S V = 25V, I = 45A DS D Q Total Gate Charge 48 72 g Q Pre-Vth Gate-to-Source Charge 10 = 38V V gs1 DS Q Post-Vth Gate-to-Source Charge 4.0 V = 10V gs2 GS nC Q Gate-to-Drain Charge 15 I = 45A gd D Q Gate Charge Overdrive 19 godr Q Switch Charge (Q + Q ) 19 sw gs2 gd Q Output Charge 19 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.6 G t Turn-On Delay Time 9.1 V = 38V, V = 10V d(on) DD GS t Rise Time 12 I = 45A r D ns t Turn-Off Delay Time 20 R =1.8 d(off) G t Fall Time 6.5 f C Input Capacitance 3110 V = 0V iss GS C Output Capacitance 365 V = 25V pF oss DS C Reverse Transfer Capacitance 165 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 106 mJ AS Avalanche Current I 45 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 75 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 300 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 45A, V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C, I = 45A, V = 38V rr J F DD di/dt = 500A/s Q Reverse Recovery Charge 160 240 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.2 JC Junction-to-Case R (Top) 30 JC C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA