X-On Electronics has gained recognition as a prominent supplier of XP162A12A6PR-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. XP162A12A6PR-G MOSFETs are a product manufactured by Torex Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

XP162A12A6PR-G Torex Semiconductor

XP162A12A6PR-G electronic component of Torex Semiconductor
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Part No.XP162A12A6PR-G
Manufacturer: Torex Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET, -20V, 2.5A, P-Type, SOT-89
Datasheet: XP162A12A6PR-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Shipping Restricted
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.3679
10 : USD 0.8659
100 : USD 0.6374
250 : USD 0.5917
500 : USD 0.5037
1000 : USD 0.4023
2000 : USD 0.3644
5000 : USD 0.3432
10000 : USD 0.3321
N/A

Shipping Restricted
0
MOQ : 1
Multiples : 1
1 : USD 1.1242
25 : USD 0.6216
40 : USD 0.4074
109 : USD 0.385
N/A

Shipping Restricted
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the XP162A12A6PR-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP162A12A6PR-G and other electronic components in the MOSFETs category and beyond.

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XP162A12A6PR-G ETR1126 003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on) = 0.17 Vgs = -4.5V Notebook PCs : Rds(on) = 0.3 Vgs = -2.5V Cellular and portable phones Ultra High-Speed Switching Dribing Voltage : -2.5V On-board power supplies Gate Protect Diode Built-in Li-ion battery systems P-Channel Power MOSFET DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ PRODUCT NAME MARKING PRODUCTS PACKAGE ORDER UNIT XP162A12A6PR SOT-89 1,000/Reel (*) G : Gate XP162A12A6PR-G SOT-89 1,000/Reel S : Source (*) The -G suffix denotes Halogen and Antimony free as well as D : Drain being fully RoHS compliant. * x represents production lot number. ABSOLUTE MAXIMUM RATINGS Ta = 25 EQUIVALENT CIRCUIT PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss -20 V Gate-Source Voltage Vgss 12 V Drain Current (DC) Id -2.5 A Drain Current (Pulse) Idp -10 A Reverse Drain Current Idr -2.5 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 Tstg -55~150 Storage Temperature * When implemented on a ceramic PCB 1/5 2 1 2 x XP162A12A6PR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= -20V, Vgs= 0V - - -10 A Gate-Source Leak Current Igss Vgs= 12V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -0.5 - -1.2 V Id= -1.5A, Vgs= -4.5V - 0.13 0.17 Drain-Source On-State Resistance*1 Rds(on) Id= -1.5A, Vgs= -2.5V - 0.22 0.30 Forward Transfer Admittance*1 Yfs Id= -1.5A, Vds= -10V - 4 - S Body Drain Diode Vf If= -2.5A, Vgs= 0V - -0.85 -1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 310 - pF Vds= -10V, Vgs=0V Output Capacitance Coss - 200 - pF f= 1MHz Feedback Capacitance Crss - 90 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 5 - ns Rise Time tr - 15 - ns Vgs= -5V, Id= -1.5A Vdd= -10V Turn-Off Delay Time td (off) - 55 - ns Fall Time tf - 55 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 62.5 - /W (Channel-Ambience) 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Torex Semicon
Torex Semiconductor Ltd
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