XP162A12A6PR-G ETR1126 003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on) = 0.17 Vgs = -4.5V Notebook PCs : Rds(on) = 0.3 Vgs = -2.5V Cellular and portable phones Ultra High-Speed Switching Dribing Voltage : -2.5V On-board power supplies Gate Protect Diode Built-in Li-ion battery systems P-Channel Power MOSFET DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ PRODUCT NAME MARKING PRODUCTS PACKAGE ORDER UNIT XP162A12A6PR SOT-89 1,000/Reel (*) G : Gate XP162A12A6PR-G SOT-89 1,000/Reel S : Source (*) The -G suffix denotes Halogen and Antimony free as well as D : Drain being fully RoHS compliant. * x represents production lot number. ABSOLUTE MAXIMUM RATINGS Ta = 25 EQUIVALENT CIRCUIT PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss -20 V Gate-Source Voltage Vgss 12 V Drain Current (DC) Id -2.5 A Drain Current (Pulse) Idp -10 A Reverse Drain Current Idr -2.5 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 Tstg -55~150 Storage Temperature * When implemented on a ceramic PCB 1/5 2 1 2 x XP162A12A6PR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= -20V, Vgs= 0V - - -10 A Gate-Source Leak Current Igss Vgs= 12V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -0.5 - -1.2 V Id= -1.5A, Vgs= -4.5V - 0.13 0.17 Drain-Source On-State Resistance*1 Rds(on) Id= -1.5A, Vgs= -2.5V - 0.22 0.30 Forward Transfer Admittance*1 Yfs Id= -1.5A, Vds= -10V - 4 - S Body Drain Diode Vf If= -2.5A, Vgs= 0V - -0.85 -1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 310 - pF Vds= -10V, Vgs=0V Output Capacitance Coss - 200 - pF f= 1MHz Feedback Capacitance Crss - 90 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 5 - ns Rise Time tr - 15 - ns Vgs= -5V, Id= -1.5A Vdd= -10V Turn-Off Delay Time td (off) - 55 - ns Fall Time tf - 55 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 62.5 - /W (Channel-Ambience) 2/5