X-On Electronics has gained recognition as a prominent supplier of DMC1028UFDB-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMC1028UFDB-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMC1028UFDB-7 Diodes Incorporated

DMC1028UFDB-7 electronic component of Diodes Incorporated
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Part No.DMC1028UFDB-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Diodes Incorporated MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss
Datasheet: DMC1028UFDB-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8855 ea
Line Total: USD 0.89 
Availability - 3877
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1872
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5096
10 : USD 0.4562
30 : USD 0.4295
100 : USD 0.4027
500 : USD 0.3876
1000 : USD 0.3799

3877
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8855
10 : USD 0.7095
100 : USD 0.4899
500 : USD 0.391
1000 : USD 0.3576
3000 : USD 0.3013

20370
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.3412

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Operating Temperature Classification
Operating Temp Range
Gate-Source Voltage Max
Power Dissipation
Number Of Elements
Mounting
Package Type
Pin Count
Polarity
Rad Hardened
Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMC1028UFDB-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMC1028UFDB-7 and other electronic components in the MOSFETs category and beyond.

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DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D Device BV R max DSS DS(ON) T = +25C Low Input Capacitance A Low Profile, 0.6mm Max Height 25m V = 4.5V 6.0A GS Q1 12V 30m V = 3.3V 5.5A ESD HBM Protected up to 1.5KV, MM Protected up to 150V. GS N-Channel 32m V = 2.5V 5.3A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -3.4A 80m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Q2 -20V 90m V = -3.3V -3.2A GS P-Channel 100m V = -2.5V -3.0A GS Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: U-DFN2020-6 (Type B) (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Applications e4 Solderable per MIL-STD-202, Method 208 Optimized for Point of Load (POL) Synchronous Buck Converter that Terminals Connections: See Diagram Below steps down from 3.3V to 1V for core voltage supply to ASICs. Target Weight: 0.0065 grams (Approximate) applications are Ethernet Network Controllers used in: Routers, Switchers, Network Interface Controllers (NICs) Digital Subscriber Line (DSL) Set-Top Boxes (STBs) D1 D2 U-DFN2020-6 (Type B) S2 G2 G1 G2 D2 D1 D1 D2 Gate Protection ESD PROTECTED G1 Gate Protection S1 Diode S2 Diode S1 N-CHANNEL MOSFET P-CHANNEL MOSFET Pin1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMC1028UFDB-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel DMC1028UFDB-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC1028UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Q1 Q2 Characteristic Symbol Units N-CHANNEL P-CHANNEL Drain-Source Voltage V 12 -20 V DSS Gate-Source Voltage V 8 8 V GSS Steady T = +25C 6.0 -3.4 A I A D State 4.8 -2.7 TA = +70C Continuous Drain Current (Note 5) V = 4.5V GS T = +25C 7.1 -4.0 A t < 5s A I D 5.7 -3.2 T = +70C A -1.4 Maximum Continuous Body Diode Forward Current (Note 5) I 1.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 40 -20 A DM Avalanche Current L = 0.1mH I 12 -12 A AS Avalanche Energy L = 0.1mH E 8.4 7.5 mJ AS Thermal Characteristics Characteristic Symbol Value Units Steady State 1.36 Total Power Dissipation (Note 5) P W D t < 5s 1.89 Steady State 92 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 5s 66 C/W Thermal Resistance, Junction to Case (Note 5) 19 RJC Operating and Storage Temperature Range -55 to +150 C T T J, STG Note: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. Electrical Characteristics Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 12 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - 1.0 A V = 12V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.4 - 1 V V = V , I = 250A GS(TH) DS GS D - 17 25 V = 4.5V, I = 5.2A GS D - 19 30 V = 3.3V, I = 5.0A GS D Static Drain-Source On-Resistance m R DS(ON) - 21 32 V = 2.5V, I = 4.8A GS D - 30 40 V = 1.8V, I = 2.5A GS D Diode Forward Voltage - 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance - 787 - pF C iss V = 6V, V = 0V, DS GS Output Capacitance - 203 - pF C oss f = 1.0MHz Reverse Transfer Capacitance C - 177 - pF rss Gate Resistance R - 4.8 - V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 3.3V) - 7.9 - nC GS Total Gate Charge (V = 4.5V) Q - 10.5 - nC GS g Total Gate Charge (V = 8V) - 18.5 - nC V = 6V, I = 6.8A GS DS D Gate-Source Charge - 1.2 - nC Q gs Gate-Drain Charge - 2.9 - nC Q gd Turn-On Delay Time - 4.6 - ns t D(ON) Turn-On Rise Time - 9.4 - ns t V = 6V, V = 4.5V, R DD GS Turn-Off Delay Time - 15.7 - ns t RL = 1.1, RG = 1 D(OFF) Turn-Off Fall Time t - 3.7 - ns F Body Diode Reverse Recovery Time t - 12.0 - ns I = 5.4A, dI/dt = 100A/s RR S Body Diode Reverse Recovery Charge Q - 1.8 - nC I = 5.4A, dI/dt = 100A/s RR S 2 of 10 DMC1028UFDB May 2015 Diodes Incorporated www.diodes.com Document number: DS37634 Rev. 4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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