DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D Device BV R max DSS DS(ON) T = +25C Low Input Capacitance A Low Profile, 0.6mm Max Height 25m V = 4.5V 6.0A GS Q1 12V 30m V = 3.3V 5.5A ESD HBM Protected up to 1.5KV, MM Protected up to 150V. GS N-Channel 32m V = 2.5V 5.3A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -3.4A 80m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Q2 -20V 90m V = -3.3V -3.2A GS P-Channel 100m V = -2.5V -3.0A GS Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: U-DFN2020-6 (Type B) (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Applications e4 Solderable per MIL-STD-202, Method 208 Optimized for Point of Load (POL) Synchronous Buck Converter that Terminals Connections: See Diagram Below steps down from 3.3V to 1V for core voltage supply to ASICs. Target Weight: 0.0065 grams (Approximate) applications are Ethernet Network Controllers used in: Routers, Switchers, Network Interface Controllers (NICs) Digital Subscriber Line (DSL) Set-Top Boxes (STBs) D1 D2 U-DFN2020-6 (Type B) S2 G2 G1 G2 D2 D1 D1 D2 Gate Protection ESD PROTECTED G1 Gate Protection S1 Diode S2 Diode S1 N-CHANNEL MOSFET P-CHANNEL MOSFET Pin1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMC1028UFDB-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel DMC1028UFDB-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC1028UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Q1 Q2 Characteristic Symbol Units N-CHANNEL P-CHANNEL Drain-Source Voltage V 12 -20 V DSS Gate-Source Voltage V 8 8 V GSS Steady T = +25C 6.0 -3.4 A I A D State 4.8 -2.7 TA = +70C Continuous Drain Current (Note 5) V = 4.5V GS T = +25C 7.1 -4.0 A t < 5s A I D 5.7 -3.2 T = +70C A -1.4 Maximum Continuous Body Diode Forward Current (Note 5) I 1.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 40 -20 A DM Avalanche Current L = 0.1mH I 12 -12 A AS Avalanche Energy L = 0.1mH E 8.4 7.5 mJ AS Thermal Characteristics Characteristic Symbol Value Units Steady State 1.36 Total Power Dissipation (Note 5) P W D t < 5s 1.89 Steady State 92 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 5s 66 C/W Thermal Resistance, Junction to Case (Note 5) 19 RJC Operating and Storage Temperature Range -55 to +150 C T T J, STG Note: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. Electrical Characteristics Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 12 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - 1.0 A V = 12V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.4 - 1 V V = V , I = 250A GS(TH) DS GS D - 17 25 V = 4.5V, I = 5.2A GS D - 19 30 V = 3.3V, I = 5.0A GS D Static Drain-Source On-Resistance m R DS(ON) - 21 32 V = 2.5V, I = 4.8A GS D - 30 40 V = 1.8V, I = 2.5A GS D Diode Forward Voltage - 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance - 787 - pF C iss V = 6V, V = 0V, DS GS Output Capacitance - 203 - pF C oss f = 1.0MHz Reverse Transfer Capacitance C - 177 - pF rss Gate Resistance R - 4.8 - V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 3.3V) - 7.9 - nC GS Total Gate Charge (V = 4.5V) Q - 10.5 - nC GS g Total Gate Charge (V = 8V) - 18.5 - nC V = 6V, I = 6.8A GS DS D Gate-Source Charge - 1.2 - nC Q gs Gate-Drain Charge - 2.9 - nC Q gd Turn-On Delay Time - 4.6 - ns t D(ON) Turn-On Rise Time - 9.4 - ns t V = 6V, V = 4.5V, R DD GS Turn-Off Delay Time - 15.7 - ns t RL = 1.1, RG = 1 D(OFF) Turn-Off Fall Time t - 3.7 - ns F Body Diode Reverse Recovery Time t - 12.0 - ns I = 5.4A, dI/dt = 100A/s RR S Body Diode Reverse Recovery Charge Q - 1.8 - nC I = 5.4A, dI/dt = 100A/s RR S 2 of 10 DMC1028UFDB May 2015 Diodes Incorporated www.diodes.com Document number: DS37634 Rev. 4 - 2