DMC25D1UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device V R (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed Q1 25V 4 V = 4.5V 0.5A GS Low Input/Output Leakage 55m V = -4.5V -3.9A GS Q2 -12V ESD Protected Gate 70m V = -2.5V -3.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Case: TSOT26 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Load Switch Weight: 0.013 grams (Approximate) D1 D2 Q2 Vin, R1 Vout, C1 TSOT26 4 3 5 2 ON/OFF Vout, C1 G1 G2 Q1 R1, C1 6 1 R2 Gate Protection Gate Protection S1 S2 Diode Diode Top View Top View Q1 N-Channel MOSFET Q2 P-Channel MOSFET Internal circuit Ordering Information (Note 4) Part Number Case Packaging DMC25D1UVT-7 TSOT26 3000 / Tape & Reel DMC25D1UVT-13 TSOT26 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC25D1UVT Maximum Ratings Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 25 V V DSS -0.5 Gate-Source Voltage V V GSS +8 0.5 A Continuous Drain Current (Note 5) V = 4.5V I GS D Maximum Continuous Body Diode Forward Current (Note 6) I 1.2 A S Pulsed Drain Current (Note 6) I 1.5 A DM Maximum Ratings Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Steady State -3.9 A Continuous Drain Current (Note 5) V = -4.5V GS Note 9 -17.4 A I D Continuous Drain Current (Note 5) V = -2.5V -2.82 A GS Maximum Continuous Body Diode Forward Current (Note 6) I -40 A S Pulsed Drain Current (Note 6) -40 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.3 W P D Steady State 100 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA Note 9 5 Thermal Resistance, Junction to Case (Note 5) 36 C/W R JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 25 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.65 0.85 1.5 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 3.8 4 V = 4.5V, I = 0.4A DS(ON) GS D Diode Forward Voltage V 0.76 1.2 V V = 0V, I = 0.29A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 27.6 Input Capacitance C iss V = 10V, V = 0V, DS GS 8.5 Output Capacitance pF Coss f = 1.0MHz 3.3 Reverse Transfer Capacitance C rss Gate Resistance 25 R V = 0V, V = 0V, f = 1MHz g DS GS 0.4 Total Gate Charge (V = 4.5V) Q GS g 0.9 Total Gate Charge (V = 10V) Q GS g nC V = 5V, I = 0.2A DS D Gate-Source Charge 0.1 Q gs 0.04 Gate-Drain Charge Q gd 2.5 Turn-On Delay Time t D(ON) 1.4 Turn-On Rise Time t R V = 4.5V, V = 6V, GS DS ns 5.7 Turn-Off Delay Time t R = 50, I = 0.5A D(OFF) G D 4.3 Turn-Off Fall Time t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2 of 9 April 2015 DMC25D1UVT www.diodes.com Diodes Incorporated Document number: DS37507 Rev. 2 - 2 ADAVDAVNACNECDE I NINFFOORRMMAATTIOIONN NEW PRODUCT