DMC3028LSDX COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low Input Capacitance D Device V R max (BR)DSS DS(ON) T = +25C A Low On-Resistance Fast Switching Speed 27m V = 10V 7.2A GS Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m V = 4.5V 6.0A GS Halogen and Antimony Free. Green Device (Note 3) 25m V = -10V -7.6A GS Q2 -30V Qualified to AEC-Q101 Standards for High Reliability 41m V = -4.5V GS -6.2A An Automotive-Compliant Part is Available Under Separate Datasheet (DMC3028LSDXQ) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SO-8 resistance (R ) and yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish Tin Finish Annealed over Copper Leadframe. DC-DC Converters e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074 grams (Approximate) Backlighting D 1 D 2 S1 D1 D1 G1 G1 G2 S2 D2 G2 D2 S2 S1 Equivalent Circuit Top View Top View Pin Configuration Q N-Channel MOSFET Q2 P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC3028LSDX-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3028LSDX Maximum Ratings Q1 and Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Q2 Units Drain-Source Voltage V 30 -30 V DSS Gate-Source Voltage V 20 20 V GSS T = +25C Steady 5.5 -5.8 A A I D State 4.1 -4.3 T = +70C A Continuous Drain Current (Note 5) V =10V GS T = +25C 7.2 -7.6 A t<10s I A D 5.7 -6.1 T = +70C A Maximum Body Diode Forward Current (Note 5) 2.2 -2.2 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 40 -30 A I DM Avalanche Current (Note 7) L = 0.1mH 14.5 -22 A I AS Avalanche Energy (Note 7) L = 0.1mH E 10.5 25 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 5) P W D 0.75 T = +70C A Steady state 108 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 65 1.5 T = +25C A Total Power Dissipation (Note 6) W P D 0.95 T = +70C A Steady state 85 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 6) R 14.5 JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(th) DS GS D 19 27 V = 10V, I = 6A GS D Static Drain-Source On-Resistance m R DS (ON) 22 35 V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.3A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 641 C iss V = 15V, V = 0V DS GS Output Capacitance 66 pF C oss f = 1.0MHz Reverse Transfer Capacitance 51 C rss Gate Resistance 2.2 R V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 4.5V) Q 6 GS g Total Gate Charge (V = 10V) Q 13.2 GS g nC V = 15V, I = 10A DS D Gate-Source Charge Q 1.7 gs Gate-Drain Charge Q 2.2 gd Turn-On Delay Time t 3.3 D(on) Turn-On Rise Time t 4.4 r V = 10V, V = 15V, R = 6, GS DD G nS Turn-Off Delay Time 22.3 I = 1A t D D(off) Turn-Off Fall Time 5.3 t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 9 DMC3028LSDX November 2015 Diodes Incorporated www.diodes.com Document number: DS36210 Rev. 4 - 2 ADVANCE INFORMATION ADVANCED INFORMATION