DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX Device V R (BR)DSS DS(ON) max Low Input Capacitance T = +25C A Low Profile, 0.6mm Max Height 4.7A Q1 40m V = 4.5V GS 20V ESD protected Gate N-Channel 3.7A 65m V = 2.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 90m V = -4.5V -3.2A Q2 GS -20V P-Channel Halogen and Antimony Free. Green Device (Note 3) -2.6A 137m VGS = -2.5V Mechanical Data Description Case: U-DFN2020-6 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe Solderable per Applications e4 MIL-STD-202, Method 208 Load Switch Terminal Connections: See Diagram Below Power Management Functions Weight: 0.0065 grams (Approximate) Portable Power Adaptors D1 U-DFN2020-6 D2 S2 G2 D2 G1 G2 D1 D1 D2 G1 ESD PROTECTED Gate Protection S1 Gate Protection S1 Diode S2 Diode Pin1 Q2 P-CHANNEL MOSFET Bottom View Q1 N-CHANNEL MOSFET Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMC2041UFDB -7 U-DFN2020-6 3,000/Tape & Reel DMC2041UFDB -13 U-DFN2020-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC2041UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Q1 Q2 Characteristic Symbol Units N-CHANNEL P-CHANNEL Drain-Source Voltage V 20 -20 V DSS Gate-Source Voltage V 12 12 V GSS Steady TA = +25C 4.7 -3.2 A I D State 3.8 -2.5 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS T = +25C 6.1 -4.1 A t < 5s I A D 4.9 -3.2 T = +70C A -1.5 Maximum Continuous Body Diode Forward Current (Note 5) I 2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 30 -18 A DM Thermal Characteristics Characteristic Symbol Value Units Steady State 1.4 Total Power Dissipation (Note 5) W P D t < 5s 2.2 Steady State 92 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 5s 55 C/W Thermal Resistance, Junction to Case (Note 5) 30 R JC Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.35 1.4 V V V = V , I = 250A GS(th) DS GS D 23 40 V = 4.5V, I = 4.2A GS D Static Drain-Source On-Resistance R m DS (ON) 26 65 V = 2.5V, I = 3.3A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 4.4A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 713 pF iss V = 10V, V = 0V, DS GS Output Capacitance C 80 pF oss f = 1.0MHz Reverse Transfer Capacitance C 68 pF rss Gate Resistance R 15 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) 8 nC GS Q g Total Gate Charge (V = 8V) 15 nC GS V = 10V, I = 5.5A DS D Gate-Source Charge 1.0 nC Q gs Gate-Drain Charge 1.1 nC Q gd Turn-On Delay Time 3.6 ns t D(on) Turn-On Rise Time 15.9 ns t r V = 10V, V = 4.5V, DD GS R = 2.3, R = 1 Turn-Off Delay Time t 16.0 ns L G D(off) Turn-Off Fall Time t 2.6 ns f Body Diode Reverse Recovery Time trr 6.6 nS I = 4.4A, dI/dt = 100A/s S Body Diode Reverse Recovery Charge Qrr 1.2 nC I = 4.4A, dI/dt = 100A/s S Notes: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 9 DMC2041UFDB February 2015 Diodes Incorporated www.diodes.com Document number: DS37420 Rev. 2 - 2