DMC2450UV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D Device V R max (BR)DSS DS(ON) T = +25C Low Gate Threshold Voltage V <1V A GS(th) Low Input Capacitance 0.5 V = 4.5V 1030mA GS Q1 20V Fast Switching Speed 0.9 V = 1.8V 740mA GS Low Input/Output Leakage -700mA 1.0 V = -4.5V GS Q2 -20V Complementary Pair MOSFET -460mA 2.0 V = -1.8V GS Ultra-Small Surface Mount Package ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high-efficiency power management applications. Mechanical Data Case: SOT563 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Load Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.003 grams (Approximate) D1 D2 SOT563 D G S 1 2 2 G1 G2 Gate Protection Gate Protection S G D 1 1 2 S1 Diode S2 Diode ESD PROTECTED Top View Bottom View Q1 N-CHANNEL Q2 P-CHANNEL Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMC2450UV-7 SOT563 3,000/Tape & Reel DMC2450UV-13 SOT563 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC2450UV Maximum Ratings - Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 1,030 A mA I D State 800 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 1,150 A t<10s I mA D 900 T = +70C A Steady T = +25C 740 A mA I D State 570 T = +70C A Continuous Drain Current (Note 6) V = 1.8V GS TA = +25C 870 t<10s I mA D 700 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 3 A DM Maximum Body Diode Continuous Current I 800 mA S Maximum Ratings - Q2 P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C -700 A mA I D State -550 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS TA = +25C -820 t<10s I mA D -640 T = +70C A Steady T = +25C -460 A mA I D State -350 T = +70C A Continuous Drain Current (Note 6) V = -1.8V GS T = +25C A -550 t<10s I mA D -420 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) -2 A I DM Maximum Body Diode Continuous Current I -800 mA S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.45 W P D Steady state 281 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 210 C/W Total Power Dissipation (Note 6) 1 W P D Steady state 129 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 97 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 DMC2450UV September 2015 Diodes Incorporated www.diodes.com Document number: DS38197 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT