DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 500 V DSS High dv/dt Nanosecond Switching I = 16 A D25 Ideal for Class C, D, & E Applications R = 0.4 DS(on) Symbol Test Conditions Maximum Ratings P = 590 W DC T = 25C to 150C J V 500 V DSS T = 25C to 150C R = 1 M J GS V 500 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C I c 16 A D25 T = 25C, pulse width limited by T c JM I 96 A DM T = 25C c I 16 A AR T = 25C c E 20 mJ AR DRAIN I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt GATE I = 0 S >200 V/ns P 590 W DC T = 25C c P 284 W DHS SG1 SG2 SD1 SD2 Derate 1.9W/C above 25C T = 25C c Features P 3.0 W DAMB Isolated Substrate R 0.25 C/W thJC high isolation voltage (>2500V) R 0.53 C/W thJHS excellent thermal transfer Increased temperature and power Symbol Test Conditions Characteristic Values cycling capability IXYS advanced low Q process g T = 25C unless otherwise specified J min. typ. max. Low gate charge and capacitances V = 0 V, I = 3 ma easier to drive GS D V 500 V DSS faster switching V = V , I = 4 ma DS GS D V 3.5 4.0 5.5 V GS(th) Low R DS(on) Very low insertion inductance (<2nH) V = 20 V , V = 0 GS DC DS I 100 nA GSS No beryllium oxide (BeO) or other V = 0.8 V T = 25C hazardous materials DS DSS J I 50 DSS A V = 0 T = 125C GS J 1 mA Advantages V = 15 V, I = 0.5I GS D D25 R .38 Optimized for RF and high speed DS(on) Pulse test, t 300S, duty cycle d 2% switching at frequencies to 100MHz Easy to mountno insulators needed V = 20V, ID = 0.5 ID25 pulse test g DS 3 5 8 S fs High power density T -55 +175 C J T 175 C JM T -55 +175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 2 g DE275-501N16A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 1650 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 122 pF oss f = 1 MHz C 33 pF rss Back Metal to any Pin C 21 pF stray T 3 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 2 ns on I = 0.5 I D DM T R = 0.2 (External) 4 ns d(off) G T 5 ns off Q 50 nC g V = 10 V, V = 0.5 V GS DS DSS Q 12 nC gs I = 0.5 I D D25 Q 24 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V I GS 6 A S Repetitive pulse width limited by T JM I 98 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, F S Q 0.6 C RM V = 100V R I 4 A RM For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at