DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 1000 V High dv/dt DSS Nanosecond Switching I = 12 A D25 50MHz Maximum Frequency R 1.05 DS(on) Symbol Test Conditions Maximum Ratings T = 25C to 150C P = 940 W V J 1000 V DC DSS T = 25C to 150C R = 1 M J GS V 1000 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 12 A D25 T = 25C, pulse width limited by T c JM I 72 A DM T = 25C c I 12 A AR T = 25C c E 30 mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 940 W DRAIN DC T = 25C GATE c P 425 W DHS Derate 3.7W/C above 25C T = 25C c P 4.5 W DAMB R 0.16 C/W thJC SG1 SG2 SD1 SD2 R 0.35 C/W thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate T = 25C unless otherwise specified J min. typ. max. high isolation voltage (>2500V) excellent thermal transfer V = 0 V, I = 3 ma GS D V 1000 V DSS Increased temperature and power cycling capability V = V , I = 250 a DS GS D V 4.0 4.7 5.5 V GS(th) IXYS advanced low Q process g V = 20 V , V = 0 GS DC DS I 100 nA GSS Low gate charge and capacitances easier to drive V = 0.8 V T = 25C DS DSS J I 50 DSS A V = 0 T = 125C GS J faster switching 1 mA Low R DS(on) V = 15 V, I = 0.5I R GS D D25 1.05 DS(on) Very low insertion inductance (<2nH) Pulse test, t 300S, duty cycle d 2% No beryllium oxide (BeO) or other haz- ardous materials V = 15 V, I = 0.5I , pulse test DS D D25 g 6.7 8.0 S fs Advantages T -55 +175 C J Optimized for RF and high speed T 175 C JM switching at frequencies to 50MHz Easy to mountno insulators needed T -55 +175 C stg High power density 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 3 g DE375-102N12A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 0.3 G C 2500 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 110 pF oss f = 1 MHz C 25 pF rss Back Metal to any Pin C 33 pF stray T 5 ns d(on) V = 15 V, V = 0.8 V T GS DS DSS 3 ns on I = 0.5 I D DM R = 0.2 (External) G T 5 ns d(off) T 8 ns off Q 77 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 16 nC gs I = 0.5 I D D25 Q 42 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 12 A S Repetitive pulse width limited by T JM I 72 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, Q F S 0.6 RM C V = 100V R I 7 A RM CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at