DocumentNumber:MD8IC970N FreescaleSemiconductor Rev. 2, 5/2011 TechnicalData RFLDMOSWidebandIntegrated PowerAmplifiers MD8IC970NR1 The MD8IC970N wideband integrated circuit is designed with on--chip MD8IC970GNR1 prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency 850--940MHz,35WAVG.,28V sub--band. RFLDMOSWIDEBAND TypicalTwo--TonePerformance: V =28Volts,V =25Volts, DD1 DD2 INTEGRATEDPOWERAMPLIFIERS I =60mA,I = 550mA, P = 35Watts Avg. DQ1(A+B) DQ2(A+B) out G PAE IMD ps Frequency (dB) (%) (dBc) 850MHz 30.6 40.1 --30.5 900MHz 31.9 42.4 --31.0 940MHz 32.6 42.1 --31.3 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 137Watts CW CASE1866--02 Output Power (3dB Input Overdrivefrom RatedP ), Designedfor TO--270WBL--16 out EnhancedRuggedness PLASTIC MD8IC970NR1 Typical P 1dB CompressionPoint79Watts CW out Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters On--ChipPrematching. On--ChipStabilization. IntegratedQuiescent Current TemperatureCompensationwith CASE1867--02 (1) Enable/DisableFunction TO--270WBL--16GULL IntegratedESD Protection PLASTIC 225C CapablePlastic Package MD8IC970GNR1 RoHSCompliant InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. RF in2A RF /V out1A D1A 1 RF in2A V G1A 2 RF /V out1A D1A 3 GND RF RF /V in1A 16 out2A D2A GND 4 RF / out2A V 5 G1A V D2A 6 RF in1A V V 7 G2A QuiescentCurrent G2A (1) V 8 TemperatureCompensation G2B 9 RF in1B RF / 10 15 out2B V G1B RF in2B V 11 GND D2B RF /V out1B D1B 12 GND RF /V 13 out1B D1B V G2B 14 RF in2B (TopView) RF /V RF in1B out2B D2B Note: Exposed backside of the package is V G1B QuiescentCurrent thesourceterminalforthetransistors. (1) TemperatureCompensation Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --0.5,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 30 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit FinalApplication ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,35W Avg.Two--Tone Stage1,28Vdc,I =60mA,f1=939.9MHz,f2=940.1MHz 2.9 DQ1(A+B) Stage2,25Vdc,I =550mA,f1=939.9MHz,f2=940.1MHz 0.6 DQ2(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1A (Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) I(Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) Stage1OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS (4) Stage1OnCharacteristics GateThresholdVoltage V 1.2 2.0 2.7 Vdc GS(th) (V =10Vdc,I =40Adc) DS D GateQuiescentVoltage V 3.1 Vdc GS(Q) (V =28Vdc,I =60mAdc) DS DQ1(A+B) FixtureGateQuiescentVoltage V 9.0 10.0 11.0 Vdc GG(Q) (V =28Vdc,I =60mAdc,MeasuredinFunctionalTest) DD1 DQ1(A+B) 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat