DocumentNumber:MD8IC970N
FreescaleSemiconductor
Rev. 2, 5/2011
TechnicalData
RFLDMOSWidebandIntegrated
PowerAmplifiers
MD8IC970NR1
The MD8IC970N wideband integrated circuit is designed with on--chip
MD8IC970GNR1
prematching that makes it usable from 136 to 940 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical base station
modulation formats. This device has a 2--stage design with off--chip matching
for the input, interstage and output networks to cover the desired frequency
850--940MHz,35WAVG.,28V
sub--band.
RFLDMOSWIDEBAND
TypicalTwo--TonePerformance: V =28Volts,V =25Volts,
DD1 DD2
INTEGRATEDPOWERAMPLIFIERS
I =60mA,I = 550mA, P = 35Watts Avg.
DQ1(A+B) DQ2(A+B) out
G PAE IMD
ps
Frequency (dB) (%) (dBc)
850MHz 30.6 40.1 --30.5
900MHz 31.9 42.4 --31.0
940MHz 32.6 42.1 --31.3
Capableof Handling10:1VSWR, @32Vdc, 940MHz, 137Watts CW CASE1866--02
Output Power (3dB Input Overdrivefrom RatedP ), Designedfor
TO--270WBL--16
out
EnhancedRuggedness PLASTIC
MD8IC970NR1
Typical P @1dB CompressionPoint79Watts CW
out
Features
CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters
andCommonSourceS--Parameters
On--ChipPrematching. On--ChipStabilization.
IntegratedQuiescent Current TemperatureCompensationwith
CASE1867--02
(1)
Enable/DisableFunction
TO--270WBL--16GULL
IntegratedESD Protection
PLASTIC
225C CapablePlastic Package MD8IC970GNR1
RoHSCompliant
InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel.
RF
in2A
RF /V
out1A D1A
1
RF
in2A
V
G1A
2
RF /V
out1A D1A
3
GND
RF
RF /V
in1A 16
out2A D2A GND 4 RF /
out2A
V 5
G1A V
D2A
6
RF
in1A
V V 7
G2A
QuiescentCurrent G2A
(1) V 8
TemperatureCompensation G2B
9
RF
in1B
RF /
10 15 out2B
V
G1B
RF
in2B V
11
GND D2B
RF /V
out1B D1B
12
GND
RF /V 13
out1B D1B
V
G2B
14
RF
in2B
(TopView)
RF /V
RF
in1B out2B D2B
Note: Exposed backside of the package is
V
G1B QuiescentCurrent
thesourceterminalforthetransistors.
(1)
TemperatureCompensation
Figure1.FunctionalBlockDiagram Figure2.PinConnections
1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl
fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings
Rating Symbol Value Unit
Drain--SourceVoltage V --0.5,+70 Vdc
DSS
Gate--SourceVoltage V --0.5,+10 Vdc
GS
OperatingVoltage V 32,+0 Vdc
DD
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperature T 150 C
C
(1,2)
OperatingJunctionTemperature T 225 C
J
InputPower P 30 dBm
in
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
FinalApplication
ThermalResistance,JunctiontoCase R C/W
JC
CaseTemperature80C,35W Avg.Two--Tone
Stage1,28Vdc,I =60mA,f1=939.9MHz,f2=940.1MHz 2.9
DQ1(A+B)
Stage2,25Vdc,I =550mA,f1=939.9MHz,f2=940.1MHz 0.6
DQ2(A+B)
Table3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 1A (Minimum)
MachineModel(perEIA/JESD22--A115) A (Minimum)
ChargeDeviceModel(perJESD22--C101) I(Minimum)
Table4.MoistureSensitivityLevel
TestMethodology Rating PackagePeakTemperature Unit
PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C
Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
(4)
Stage1OffCharacteristics
ZeroGateVoltageDrainLeakageCurrent I 10 Adc
DSS
(V =70Vdc,V =0Vdc)
DS GS
ZeroGateVoltageDrainLeakageCurrent I 1 Adc
DSS
(V =28Vdc,V =0Vdc)
DS GS
Gate--SourceLeakageCurrent I 1 Adc
GSS
(V =1.5Vdc,V =0Vdc)
GS DS
(4)
Stage1OnCharacteristics
GateThresholdVoltage V 1.2 2.0 2.7 Vdc
GS(th)
(V =10Vdc,I =40Adc)
DS D
GateQuiescentVoltage V 3.1 Vdc
GS(Q)
(V =28Vdc,I =60mAdc)
DS DQ1(A+B)
FixtureGateQuiescentVoltage V 9.0 10.0 11.0 Vdc
GG(Q)
(V =28Vdc,I =60mAdc,MeasuredinFunctionalTest)
DD1 DQ1(A+B)
1. Continuous useatmaximum temperaturewillaffectMTTF.
2. MTTFcalculatoravailableat