X-On Electronics has gained recognition as a prominent supplier of A2I35H060NR1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. A2I35H060NR1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

A2I35H060NR1 NXP

A2I35H060NR1 electronic component of NXP
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Part No.A2I35H060NR1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
Datasheet: A2I35H060NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 37.7067 ea
Line Total: USD 18853.35 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 500
Multiples : 500
500 : USD 37.7067

   
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We are delighted to provide the A2I35H060NR1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A2I35H060NR1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:A2I35H060N FreescaleSemiconductor Rev. 0, 4/2016 TechnicalData RFLDMOSWidebandIntegrated A2I35H060NR1 PowerAmplifiers A2I35H060GNR1 The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800MHz. Thismulti--stagestructureisratedfor26to32Voperationandcoversall typicalcellular basestationmodulationformats. 34003800MHz,10WAVG.,28V AIRFASTRFLDMOSWIDEBAND 3500MHz INTEGRATEDPOWERAMPLIFIERS Typical Doherty Single--Carrier W--CDMA Characterization Performance: V =28Vdc,I =56mA,I = 141 mA, V =1.6Vdc, DD DQ1A DQ2A GS1B V =1.3Vdc,P = 10 W Avg., Input Signal PAR = 9.9 dB 0.01% GS2B out (1) Probability on CCDF. G PAE ACPR ps Frequency (dB) (%) (dBc) TO--270WB--17 3400MHz 24.0 32.5 33.4 PLASTIC A2I35H060NR1 3500MHz 24.0 32.4 37.0 3600MHz 23.7 31.3 39.0 Features AdvancedHighPerformanceIn--PackageDoherty TO--270WBG--17 PLASTIC On--ChipMatching(50Ohm Input, DC Blocked) A2I35H060GNR1 IntegratedQuiescent Current TemperatureCompensationwith (2) Enable/DisableFunction Designedfor DigitalPredistortionError CorrectionSystems 1. Alldatameasuredinfixturewithdevicesolderedtoheatsink. 2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamily,andtoAN1987,QuiescentCurrentControl for the RF Integrated Circuit Device Family. GotoV DS1A VBW Carrier A 17 (2) V 1 VBW DS1A A V 2 GS2A RF RF /V inA out1 DS2A 3 16 V GS1A RF /V out1 DS2A RF 4 inA N.C. 5 GND 6 V GS1A QuiescentCurrent 15 GND GND 7 (1) V TemperatureCompensation GS2A 8 N.C. RF 9 14 inB V GS1B RF /V QuiescentCurrent V 10 out2 DS2B GS1B (1) V TemperatureCompensation GS2B V 11 GS2B 13 (2) V 12 VBW DS1B B Peaking RF (TopView) inB RF /V out2 DS2B Note: Exposed backside of the package is V VBW thesourceterminalforthetransistors. DS1B B Figure1.FunctionalBlockDiagram Figure2.PinConnections 2. DevicecanoperatewithV current 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated DD suppliedthroughpin13andpin17. CircuitFamily,andtoAN1987,QuiescentCurrentControlfortheRFIntegratedCircuit DeviceFamily.Goto

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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