TQP7M9101 1/4 W High Linearity Amplifier General Description The TQP7M9101 is a high-linearity driver amplifier in a standard SOT-89 surface mount package. This InGaP GaAs HBT delivers high performance across a broad range 3 Pin SOT-89 Package of frequencies with +40 dBm OIP3 and with +25 dBm P1dB while only consuming 87 mA quiescent current. All devices are 100% RF and DC tested. Product Features The TQP7M9101 incorporates on-chip features that 4005000MHz differentiate it from other products in the market. The RF +25dBm P1dB output is internally matched in to 50 ohms. Only input +39.5dBm Output IP3 matching is required for optimal performance in specific frequency bands making the component easy for design 17.5dB Gain at 2140MHz engineers to implement in their systems. The amplifier +5V Single Supply, 87mA Current integrates an on-chip DC over-voltage and RF over-drive Internal RF Overdrive Protection protection. This protects the amplifier from electrical DC Internal DC Overvoltage Protection voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the On-Chip ESD Protection amplifier to have a very robust Class 2 HBM ESD rating. SOT-89 Package The TQP7M9101 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent Applications candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations. Repeaters Mobile Infrastructure CDMA / WCDMA / LTE Functional Block Diagram General Purpose Wireless Backside Paddle - GND Ordering Information 1 2 3 RF IN GND RF OUT / V CC Part No. Description TQP7M9101 1/4 W High Linearity Amplifier Top View TQP7M9101-PCB900 869960 MHz Evaluation Board TQP7M9101-PCB2140 2.112.17 GHz Evaluation Board TQP7M9101-PCB2600 2.52.7 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel Datasheet May 21, 2021 Subject to change without notice 1 of 28 www.qorvo.com TQP7M9101 1/4 W High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -65 to +150C Device Voltage, VCC +3 +5 +5.25 V RF Input Power, CW, 50, T = +25C +23dBm TCASE -40 +105 C 6 Device Voltage, VCC +8V Tj for >10 hours MTTF +170 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 400 5000 MHz Test Frequency 2140 MHz Gain 15.6 17.5 18.6 dB Input Return Loss 15 dB Output Return Loss 13.5 dB Output P1dB +23.5 +25 dBm Output IP3 Pout =+8 dBm/tone, f =1 MHz +36.5 +39.5 dBm (2) WCDMA Channel Power 50dBc ACLR +14.5 dBm Noise Figure 3.9 dB Quiescent Current, I 70 87 105 mA CQ Thermal Resistance, Junction to backside paddle 71 C/W jc Notes: 1. Test conditions unless otherwise noted: V =+5V, Temp.=+25C, matched 2140MHz reference circuit CC 2. ACLR test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Probability Performance Summary Table Frequency 635 700 800 960 1500 1805 1900 2100 2140 2600 3500 MHz Gain 20 18.5 18.7 20.1 19.4 18.0 16.6 15.9 17.5 16.5 15.0 dB Input Return Loss 12 11.8 17.7 14 19 10.7 12 12 15 10 17 dB Output Return Loss 33 12.8 19.1 17 13 15.8 11 9.5 13.5 14 11 dB Output P1dB +25.0 +24.1 +24.2 +24.4 +23.8 +25.0 +24.0 +24.2 +24.8 +24.9 +23.4 dBm Output IP3 +40.0 +39.6 +40.4 +38.2 +42.8 +39.7 +47.8 +43.8 +39.5 +40.6 +39.4 dBm Notes: 1. Test conditions unless otherwise noted: V =+5V, Temp.=+25C, matched reference circuit CC 2. Reference designs for the various frequencies are either included on this datasheet Datasheet May 21, 2021 Subject to change without notice 2 of 28 www.qorvo.com