DocumentNumber:A2T18H160--24S FreescaleSemiconductor Rev. 0, 11/2015 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET A2T18H160--24SR3 This28WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellular base station applications covering the frequency range of 1805 to 1880MHz. 1800MHz 18051880MHz,28WAVG.,28V TypicalDoherty Single--Carrier W--CDMA Performance: V =28Vdc, AIRFASTRFPOWERLDMOS DD I = 400mA, V =0.65Vdc,P = 28W Avg., Input Signal DQA GSB out TRANSISTOR PAR = 9.9dB 0.01%Probability onCCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805MHz 17.9 49.9 7.7 32.0 1840MHz 17.8 49.3 7.7 33.8 1880MHz 17.8 50.2 7.8 34.7 NI--780S--4L2L Features AdvancedHighPerformanceIn--PackageDoherty Greater NegativeGate--SourceVoltageRangefor ImprovedClass C (1) Operation 6 VBW A Carrier Designedfor DigitalPredistortionError CorrectionSystems RF /V15 RF /V inA GSA outA DSA RF /V24 RF /V inB GSB outB DSB Peaking (1) 3 VBW B (TopView) Figure1.PinConnections 1. DevicecannotoperatewiththeV current DD suppliedthroughpin3andpin6. FreescaleSemiconductor, Inc., 2015. All rights reserved. A2T18H160--24SR3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.45 C/W JC CaseTemperature75C,28W Avg.,W--CDMA,28Vdc,I =400mA, DQA V =0.65Vdc,1840MHz GSB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics -- SideA,Carrier GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =60 Adc) DS D GateQuiescentVoltage V 1.4 1.8 2.2 Vdc GSA(Q) (V =28Vdc,I =400mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =0.6Adc) GS D OnCharacteristics -- SideB,Peaking GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =100 Adc) DS D Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =1.0Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat