DocumentNumber:A2I09VD015N NXPSemiconductors Rev. 0, 06/2018 Technical Data RFLDMOSWidebandIntegrated A2I09VD015NR1 PowerAmplifiers A2I09VD015GNR1 The A2I09VD015N wideband integrated circuit is designed with on--chip matchingthatmakes itusablefrom575to960MHz. This multi--stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. 575960MHz,2WAVG.,48V AIRFASTRFLDMOSWIDEBAND 900MHz INTEGRATEDPOWERAMPLIFIERS Typical Single--Carrier W--CDMA CharacterizationPerformance: V =48Vdc,I =16mA,I =84mA,P = 2W Avg., Input DD DQ1(A+B) DQ2(A+B) out (1) Signal PAR = 9.9 dB 0.01%Probability onCCDF. G PAE ACPR ps Frequency (dB) (%) (dBc) 920 MHz 32.9 19.3 45.9 TO--270WB--15 PLASTIC 940 MHz 33.0 19.7 45.5 A2I09VD015NR1 960 MHz 32.8 19.6 44.9 Features On--chipmatching(50ohm input, DC blocked) Integratedquiescent current temperaturecompensationwith TO--270WBG--15 (2) enable/disable function PLASTIC A2I09VD015GNR1 Designedfor digital predistortionerror correctionsystems Optimizedfor Doherty applications V DS1A V 1 DS1A V 2 GS2A RF RF /V inA out1 DS2A 15 V 3 GS1A RF 4 RF /V inA out1 DS2A N.C. 5 V GS1A QuiescentCurrent N.C. 6 14 (2) N.C. V TemperatureCompensation N.C. 7 GS2A 8 N.C. V 13 RF 9 GS1B inB QuiescentCurrent RF /V out2 DS2B V 10 (2) GS1B V TemperatureCompensation GS2B V 11 GS2B V 12 DS1B RF inB RF /V (Top View) out2 DS2B Note: Exposed backside of the package is V DS1B thesourceterminalforthetransistor. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. Alldata measured in fixture with device soldered to heatsink. 2. RefertoAN1977, Quiescent Current ThermalTracking Circuit in the RFIntegrated Circuit Family,andtoAN1987, Quiescent Current Controlforthe RFIntegrated Circuit Device Family.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +105 Vdc DSS Gate--Source Voltage V 0.5, +10 Vdc GS Operating Voltage V 55, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J Input Power P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 74C, 2 W, 940 MHz Stage1, 48Vdc, I 16mA 7.2 DQ1(A+B) Stage2, 48Vdc, I 78mA 3.1 DQ2(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJS--001--2017) 1B Charge Device Model(perJS--002--2014) C0B Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at