BF771E6327HTSA1 Infineon

BF771 NPN Silicon RF Transistor For modulators and amplifiers in TV and VCR tuners 2 3 1) Pb-free (RoHS compliant) package 1 Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BF771 RBs SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 80 mA Collector current I C 10 Base current I B 2) 580 mW Total power dissipation P tot T 69C S 150 C Junction temperature T j Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 3) K/W Junction - soldering point R 140 thJS 1 Pb-containing package may be available upon special request 2 T is measured on the collector lead at the soldering point to the pcb S 3 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-20BF771 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain- h FE I = 30 mA, V = 8 V, pulse measured C CE 2 2007-04-20