X-On Electronics has gained recognition as a prominent supplier of BFR181E6327HTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR181E6327HTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR181E6327HTSA1 Infineon

BFR181E6327HTSA1 electronic component of Infineon
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Part No.BFR181E6327HTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet: BFR181E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1947 ea
Line Total: USD 0.19 
Availability - 17195
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
77
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1624
50 : USD 0.1586
150 : USD 0.1561
500 : USD 0.1535

17195
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1947
10 : USD 0.1232
100 : USD 0.0957
1000 : USD 0.0924
3000 : USD 0.0836
9000 : USD 0.0825
45000 : USD 0.0825
99000 : USD 0.0792

708
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.56
10 : USD 0.3976
25 : USD 0.308
100 : USD 0.2058
126 : USD 0.1358

8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0985
6000 : USD 0.0978
9000 : USD 0.0967
15000 : USD 0.0957
21000 : USD 0.0949
24000 : USD 0.0939
30000 : USD 0.0929
45000 : USD 0.0919
75000 : USD 0.0912
99000 : USD 0.0835

40740
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 6000
6000 : USD 0.1205

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 373
Multiples : 1
373 : USD 0.1091
500 : USD 0.1087
1000 : USD 0.1085
2000 : USD 0.1084

   
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We are delighted to provide the BFR181E6327HTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR181E6327HTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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The BFR181E6327HTSA1 is an N-Channel Power MOSFET from Infineon Technologies. It is designed for high-temperature operations and offers a low on-resistance, high breakdown voltage and fast switching capabilities. This MOSFET is suitable for use in automotive, industrial and commercial applications. The part features a maximum drain-source breakdown voltage of 400 V, a maximum drain current of 22 A and a maximum gate-source voltage of 20 V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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