BFR380L3E6327XTMA1 Infineon

BFR380L3 Low profile linear silicon NPN RF bipolar transistor Product description The BFR380L3 is a low noise device based on Si that is part of Infineons established third generation RF bipolar transistor family. Its high transition frequency and low current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.1 dB at 1.8 GHz, 3 V, 8 mA min High gain G = 14 dB at 1.8 GHz, 3 V, 40 mA ma OIP = 29.5 dBm at 1.8 GHz, 3 V, 40 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) for DVB-T/H LNAs for TV white space application Low noise, high linearity amplifiers for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR380L3 / BFR380L3E6327XTMA1 TSLP-3-1 1 = B 2 = E 3 = C FC 15000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFR380L3 Low profile linear silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 4 Package information TSLP-3-1 7 Revision history 8 Disclaimer . 9 Datasheet 2 Revision 2.0 2019-01-25