X-On Electronics has gained recognition as a prominent supplier of BFR380L3E6327XTMA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR380L3E6327XTMA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR380L3E6327XTMA1 Infineon

BFR380L3E6327XTMA1 electronic component of Infineon
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Part No.BFR380L3E6327XTMA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet: BFR380L3E6327XTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1859 ea
Line Total: USD 0.19 
Availability - 43650
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12851
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 543
Multiples : 1
543 : USD 0.1196
552 : USD 0.1178
561 : USD 0.116
569 : USD 0.1141
579 : USD 0.1123
588 : USD 0.1105
1000 : USD 0.1087
3000 : USD 0.1069
6000 : USD 0.105

2101
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 625
Multiples : 1
625 : USD 0.104
776 : USD 0.0837

43650
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1859
10 : USD 0.121
100 : USD 0.0957
1000 : USD 0.0924
2500 : USD 0.0858
15000 : USD 0.0836
45000 : USD 0.0825
90000 : USD 0.0792

14525
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 574
Multiples : 1
574 : USD 0.1132
575 : USD 0.113
2000 : USD 0.1105

12851
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 561
Multiples : 1
561 : USD 0.116
569 : USD 0.1141
579 : USD 0.1123
588 : USD 0.1105
1000 : USD 0.1087
3000 : USD 0.1069
6000 : USD 0.105

2101
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 776
Multiples : 1
776 : USD 0.0837

14550
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 4393
Multiples : 1
4393 : USD 0.111

16959
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 4393
Multiples : 1
4393 : USD 0.111

   
Manufacturer
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Technology
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Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
Brand
Factory Pack Quantity :
Rohs Mouser
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Maximum Dc Collector Current
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We are delighted to provide the BFR380L3E6327XTMA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR380L3E6327XTMA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR380L3 Low profile linear silicon NPN RF bipolar transistor Product description The BFR380L3 is a low noise device based on Si that is part of Infineons established third generation RF bipolar transistor family. Its high transition frequency and low current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.1 dB at 1.8 GHz, 3 V, 8 mA min High gain G = 14 dB at 1.8 GHz, 3 V, 40 mA ma OIP = 29.5 dBm at 1.8 GHz, 3 V, 40 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) for DVB-T/H LNAs for TV white space application Low noise, high linearity amplifiers for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR380L3 / BFR380L3E6327XTMA1 TSLP-3-1 1 = B 2 = E 3 = C FC 15000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFR380L3 Low profile linear silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 4 Package information TSLP-3-1 7 Revision history 8 Disclaimer . 9 Datasheet 2 Revision 2.0 2019-01-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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