BFP640FH6327XTSA1 Infineon

BFP640F Low profile high linearity silicon NPN RF bipolar transistor Product description The BFP640F is a RF bipolar transistor based on SiGe:C technology that is part of Infineons established sixth generation transistor family. Its transition frequency f of T 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficienc y designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 0.65 dB at 2.4 GHz, 3 V, 6 mA min High gain G = 20 dB at 2.4 GHz, 3 V, 25 mA ma OIP = 28 dBm at 2.4 GHz, 3 V, 25 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) in GNSS receivers LNAs in satellite radio (SDARs, DAB) receivers LNAs in multimedia applications such as CATV and FM radio Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP640F / BFP640FH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E R4s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 3.0 www.infineon.com 2019-01-25BFP640F Low profile high linearity silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams . 9 3.5 Characteristic AC diagrams 12 4 Package information TSFP-4-1 . 19 Revision history . 20 Disclaimer 21 Datasheet 2 Revision 3.0 2019-01-25