BFP196WNH6327XTSA1 Infineon

BFP196WN Low noise silicon bipolar RF transistor Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability. Features For high voltage applications V < 12 V CE Maximal power P = 700 mW tot Transition frequency f = 7.5 GHz T Noise figure NF = 1.3 dB at 900 MHz min Easy to use Pb-free (RoHS compliant) and halogen-free industry standard SOT343 package with visible leads 2 3 1, 4 Application GNSS active antenna Amplifiers in antenna and telecommunications systems CATV Power amplifier for DECT and PCN systems Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Device information Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Type / Ordering code Package Pin configuration Marking Related Links BFP196WN / SOT343 1=E 2=C 3=B 4=E RLs see SOT343 Package BFP196WNH6327XTSA1 Preliminary datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.0 www.infineon.com 2017-01-20BFP196WN Low noise silicon bipolar RF transistor Table of contents Table of contents Product description 1 Features . 1 Application .1 Product validation 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical performance in test fixture 5 3.1 DC parameter table 5 3.2 AC parameter tables . 5 3.3 Characteristic DC diagrams . 8 3.4 Characteristic AC diagrams 11 4 SOT343 Package . 17 Revision history . 18 Trademarks . 19 Preliminary datasheet 2 Revision 1.0 2017-01-20