BFP420F Low profile silicon NPN RF bipolar transistor Product description The BFP420F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineons established fourth generation RF bipolar transistor family. Its transition frequency f of 25 GHz and low current characteristics make the device suitable for T amplifiers up to 4.5 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.1 dB at 1.9 GHz, 3 V, 4 mA min High gain G = 19 dB at 1.9 GHz, 4 V, 40 mA ma OIP = 28 dBm at 1.9 GHz, 4 V, 40 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Radio-frequency oscillators Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP420F / BFP420FH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E AMs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP420F Low profile silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information TSFP-4-1 . 20 Revision history . 21 Disclaimer 22 Datasheet 2 Revision 2.0 2019-01-25