X-On Electronics has gained recognition as a prominent supplier of BFR193E6327HTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR193E6327HTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR193E6327HTSA1 Infineon

BFR193E6327HTSA1 electronic component of Infineon
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Part No.BFR193E6327HTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
Datasheet: BFR193E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1771 ea
Line Total: USD 0.18 
Availability - 59727
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2592
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.247
10 : USD 0.1576
25 : USD 0.1451
100 : USD 0.1104
250 : USD 0.108
500 : USD 0.107
1000 : USD 0.0863

11640
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0854
6000 : USD 0.0832
9000 : USD 0.0802
15000 : USD 0.0782
21000 : USD 0.0774
30000 : USD 0.0765

11640
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0799
9000 : USD 0.0799
15000 : USD 0.0799
30000 : USD 0.0799
60000 : USD 0.0799

948
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2085
50 : USD 0.1688
150 : USD 0.1516
500 : USD 0.1303
3000 : USD 0.1062
6000 : USD 0.1007

59727
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1771
10 : USD 0.1067
100 : USD 0.0825
1000 : USD 0.077
3000 : USD 0.0704
9000 : USD 0.0704
45000 : USD 0.0704
99000 : USD 0.0682

2592
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 94
Multiples : 1
94 : USD 0.1451
100 : USD 0.1104
250 : USD 0.1088
500 : USD 0.107
1000 : USD 0.0863

5298
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 457
Multiples : 1
457 : USD 0.089
500 : USD 0.0889
1000 : USD 0.0888
2000 : USD 0.0879

11640
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0854

   
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We are delighted to provide the BFR193E6327HTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR193E6327HTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR193 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f = 8 GHz, NF = 1 dB at 900 MHz T min Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR193 RCs SOT23 1 = B 2 = E 3 = C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 80 mA Collector current I C 10 Base current I B 1) 580 mW Total power dissipation P tot T 69C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 140 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2014-04-04 1BFR193 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 30 mA, V = 8 V, pulse measured C CE 2014-04-04 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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