X-On Electronics has gained recognition as a prominent supplier of BFR193E6327HTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR193E6327HTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR193E6327HTSA1 Infineon

BFR193E6327HTSA1 electronic component of Infineon
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Part No.BFR193E6327HTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
Datasheet: BFR193E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1656 ea
Line Total: USD 0.17 
Availability - 59876
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2592
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.247
10 : USD 0.1529
25 : USD 0.1511
100 : USD 0.1104
250 : USD 0.1092
500 : USD 0.108
1000 : USD 0.0863

2910
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0854
6000 : USD 0.0853
9000 : USD 0.0807
15000 : USD 0.0783
21000 : USD 0.0773
30000 : USD 0.0767

78570
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0799
9000 : USD 0.0799
15000 : USD 0.0799
30000 : USD 0.0799
60000 : USD 0.0799

1057
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 5
Multiples : 5
5 : USD 0.2085
50 : USD 0.1687
150 : USD 0.1516
500 : USD 0.1303
3000 : USD 0.1063
6000 : USD 0.1007

59876
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1656
10 : USD 0.1162
100 : USD 0.092
1000 : USD 0.0851
3000 : USD 0.0782
9000 : USD 0.0736
24000 : USD 0.0736
45000 : USD 0.0736
99000 : USD 0.0713

2592
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 94
Multiples : 1
94 : USD 0.1511
100 : USD 0.1104
250 : USD 0.1092
500 : USD 0.108
1000 : USD 0.0924

5298
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 449
Multiples : 1
449 : USD 0.0905

2910
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0994
6000 : USD 0.0957
9000 : USD 0.0937
15000 : USD 0.0916
21000 : USD 0.0903
30000 : USD 0.0892

   
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Product Category
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We are delighted to provide the BFR193E6327HTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR193E6327HTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR193 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f = 8 GHz, NF = 1 dB at 900 MHz T min Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR193 RCs SOT23 1 = B 2 = E 3 = C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 80 mA Collector current I C 10 Base current I B 1) 580 mW Total power dissipation P tot T 69C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 140 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2014-04-04 1BFR193 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 30 mA, V = 8 V, pulse measured C CE 2014-04-04 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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