BFR 380F H6327 Infineon

BFR380F Low profile linear silicon NPN RF bipolar transistor Product description The BFR380F is a low noise device based on Si that is part of Infineons established third generation RF bipolar transistor family. Its high current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.1 dB at 1.8 GHz, 3 V, 8 mA min High gain G = 13.5 dB at 1.8 GHz, 3 V, 40 mA ma OIP = 29 dBm at 1.8 GHz, 3 V, 40 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) for DVB-T/H LNAs for TV white space application Low noise, high linearity amplifiers for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR380F / BFR380FH6327XTSA1 TSFP-3-1 1 = B 2 = E 3 = C FCs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFR380F Low profile linear silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 6 3.1 DC characteristics . 6 3.2 General AC characteristics 6 3.3 Frequency dependent AC characteristics .7 3.4 Characteristic AC diagrams . 8 4 Package information TSFP-3-1 . 15 Revision history . 16 Disclaimer 17 Datasheet 2 Revision 2.0 2019-01-25