0912-25 Microchip

0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE The 0912-25 is a COMMON BASE bipolar transistor. It is designed for 55CX, STYLE 1 pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS o2 Maximum Power Dissipation 25 C 125 Watts Maximum Voltage and Current BVces Collector to Base Voltage 60 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 2.5 Amps Maximum Temperatures o Storage Temperature - 65 to + 150 C o Operating Junction Temperature + 200 C O ELECTRICAL CHARACTERISTICS 25 C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Out F = 960-1215 MHz 25 Watts Pin Power Input Vcc = 50 Volts 3.5 Watts Pg Power Gain 8.5 10 dB PW = 10 sec Collector Efficiency 45 % DF = 1 % c Load Mismatch Tolerance 10:1 VSWR F = 1090 MHz BVebo Emitter to Base Breakdown Ie = 25 mA 4.0 Volts BVces Collector to Emitter Breakdown Ic = 75 mA 55 Volts Cob Capacitance Collector to Base Vcb = 50 Volts 14 17 pF h DC - Current Gain Ic =300 mA, Vce =5 V 10 FE o 2 Thermal Resistance 1.4 C/W jc Note 1: At rated output power and pulse conditions. 2: At rated pulse conditions Initial Issue June 1, 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-81200912-25