X-On Electronics has gained recognition as a prominent supplier of 0912-25 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. 0912-25 RF Bipolar Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

0912-25 Microchip

0912-25 electronic component of Microchip
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See Product Specifications
Part No.0912-25
Manufacturer: Microchip
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors Avionics/Bipolar Transistor
Datasheet: 0912-25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 188.0455 ea
Line Total: USD 188.05

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 188.0455

   
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We are delighted to provide the 0912-25 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 0912-25 and other electronic components in the RF Bipolar Transistors category and beyond.

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0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE The 0912-25 is a COMMON BASE bipolar transistor. It is designed for 55CX, STYLE 1 pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS o2 Maximum Power Dissipation 25 C 125 Watts Maximum Voltage and Current BVces Collector to Base Voltage 60 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current 2.5 Amps Maximum Temperatures o Storage Temperature - 65 to + 150 C o Operating Junction Temperature + 200 C O ELECTRICAL CHARACTERISTICS 25 C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Out F = 960-1215 MHz 25 Watts Pin Power Input Vcc = 50 Volts 3.5 Watts Pg Power Gain 8.5 10 dB PW = 10 sec Collector Efficiency 45 % DF = 1 % c Load Mismatch Tolerance 10:1 VSWR F = 1090 MHz BVebo Emitter to Base Breakdown Ie = 25 mA 4.0 Volts BVces Collector to Emitter Breakdown Ic = 75 mA 55 Volts Cob Capacitance Collector to Base Vcb = 50 Volts 14 17 pF h DC - Current Gain Ic =300 mA, Vce =5 V 10 FE o 2 Thermal Resistance 1.4 C/W jc Note 1: At rated output power and pulse conditions. 2: At rated pulse conditions Initial Issue June 1, 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-81200912-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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