1214-30 Microchip

1214-30 30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1214-30 is an internally matched, COMMON BASE transistor capable of 55AW, STYLE 1 providing 30 Watts of pulsed RF output power at two milliseconds pulse width, twenty percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for long pulse radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS o Maximum Power Dissipation 25 C 88 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 4.0 Amps Maximum Temperatures o Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C O ELECTRICAL CHARACTERISTICS 25 C SYMBOL CHARACTERISTICS TEST MIN TYP MAX UNITS CONDITIONS Power Out F = 1200-1400 MHz 30 Watts Pout Pin Power Input Vcc = 28 Volts 6.0 Watts Pg Power Gain Pulse Width = 2 ms 7.0 dB Collector Efficiency Duty = 20% 48 % c Load Mismatch Tolerance Rated Conditions 3:1 VSWR BVces Collector to Emitter Breakdown Ic = 50 mA 50 Volts BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 Volts DC Current Gain Vce=5 V, Ic =500mA 20 Hfe Cob Output Capacitance* F=1 MHz, Vcb=28V pF o Thermal Resistance Rated Pulse Condition 2.0 C/W jc * Not measureable due to internal prematch network IssueA July 1997 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1214-30 Typical Impedances August 1996