1N1186 Microchip

1N1183 thru 1N1187R V = 50 V - 1000 V RRM Silicon Standard I = 35 A F Recovery Diode Features High Surge Capability DO-5 Package Types up to 1000 V V RRM Maximum ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Unit Repppetitive peak reverse voltagge V 50 100 200 300 V RRM V 140 210 RMS reverse voltage 35 70 V RMS V 50 100 200 300 V DC blocking voltage DC I T 140 C Continuous forward current 35 35 35 35 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 595 595 595 595 A F,SM C p current, Half Sine Wave Operating temperature T -65 to 190 -65 to 190 -65 to 190 -65 to 190 C j T -65 to 175 -65 to 175 Storage temperature -65 to 175 -65 to 175 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N1186 (R) 1N1187 (R) Parameter Symbol 1N1183 (R) 1N1184 (R) Unit V I = 35 A, T = 25 C 1.2 1.2 V Diode forward voltage F F j 1.2 1.2 V = 50 V, T = 25 C 10 10 R j 10 10 A I Reverse current R V = 50 V, T = 140 C 10 10 10 10 mA R j Thermal characteristics Thermal resistance, junction - R 0.25 0.25 0.25 0.25 C/W thJC case www.genesicsemi.com 11N1183 thru 1N1187R www.genesicsemi.com 2