DSA2G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplication Features High transition frequency f T Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: A4 Packaging DSA2G010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 30 V CBO 2: Emitter 3: Collector Collector-emitter voltage (Base open) V 20 V CEO Panasonic Mini3-G3-B Emitter-base voltage (Collector open) V 5 V EBO JEITA SC-59A Collector current I 30 mA C Code TO-236AA/SOT-23 Collector power dissipation P 200 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage V V = 10 V, I = 1 mA 0.7 V BE CE C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 10 A EBO EB C 1 * Forward current transfer ratio h V = 10 V, I = 1 mA 70 220 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.1 V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA 150 300 MHz T CE C Reverse transfer capacitance C V = 10 V, I = 1 mA, f = 10.7 MHz 1.0 pF re CE C (Common emitter) Noise gure NF V = 10 V, I = 1 mA, f = 5 MHz 2.8 dB CE C Reverse transfer impedance Z V = 10 V, I = 1 mA, f = 2 MHz 22 W rb CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classication * Code B C 0 Rank B C No-rank h 70 to 140 110 to 220 70 to 220 FE Marking Symbol A4B A4C A4 Product of no-rank is not classied and have no marking symbol for rank. Publication date: February 2014 Ver. CED 1DSA2G01 DSA2G01 IC-VCE DSA2G01 hFE-IC DSA2G01 PC-Ta P T I V h I C a C CE FE C 50 300 250 V = 10 V CE T = 25C a 250 40 200 T = 85C a 200 I = 500 A 450 A 400 A B 30 150 350 A 300 A 150 250 A 25C 200 A 20 100 150 A 100 40C 100 A 10 50 50 50 A 0 0 0 2 0 2 4 6 8 10 12 1 10 10 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DSA2G01 VCEsat-IC DSA2G01 IC-VBE DSA2G01 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 40 25 I / I = 10 I = 0 C B E V = 10 V CE f =1 MHz T = 25C a 25C 20 30 1 15 T = 85C a 20 40C 10 T = 85C a 1 10 10 40C 5 25C 2 10 0 0 1 2 2 10 1 10 10 0 0.4 0.8 1.2 1 10 10 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DSA2G01 fT-IC f I T C 350 V = 10 V CE T = 25C a 300 250 200 150 100 50 0 1 2 10 1 10 10 Collector current I (mA) C Ver. CED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Collector power dissipation P mW T CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)