X-On Electronics has gained recognition as a prominent supplier of MS2321 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MS2321 RF Bipolar Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MS2321 Microchip

MS2321 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.MS2321
Manufacturer: Microchip
Category: RF Bipolar Transistors
Description: Trans RF BJT NPN 65V 1.5A 3-Pin Case M-105
Datasheet: MS2321 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 228.2074 ea
Line Total: USD 228.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 228.2074

   
Manufacturer
Product Category
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Collector- Base Voltage Vcbo
Pin Count
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Category
Number Of Elements
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MS2321 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MS2321 and other electronic components in the RF Bipolar Transistors category and beyond.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - MS2321 FeaturesFeatures 20 W (typ.) IFF 1030 1025 - 50 VOLT OPERATION P = 15 WATTS OUT G DEDESCRIPTION:SCRIPTION: ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS V Collector - V CBO V Collector - Emitter Voltage V CEO V - V EBO I A C P Power Dissipation W DI T Junction Temperature C J T - C STG Thermal DataThermal Data R Junction - TH(J - C) direct. or contact our factory WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein C/W 2.0 case Thermal Resistance 65 to +150 Storage Temperature +200 SS 87.5 1.5 Device Current 3.5 Base Voltage Emitter 65 65 Base Voltage Unit Value Parameter Symbol C) (Tcase = 25 matching. for maximum broadband performance and simplified external IFF, DME and TACAN. Internal impedance matching is utilized designed for pulsed applications with low duty cycles such as The MS2321 is a gold metallized, silicon NPN power transistor COMMON BASE CONFIGURATION 20:1 VSWR CAPABILITY RATED CONDITIONS P = 10 dB MINIMUM 1150 MHz 1215 MHz 15 W (typ.) TACAN 960 1150 MHz 15 W (min.) DME 1025 1090 MHz TACAN APPLICATIONS AND DESIGNED FOR HIGH POWER PULSED IFF, DME, AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS 9855 9840 1013 18936 140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - MS2321 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25C)C) STATICSTATIC Test Conditions Typ. I I --- --- V CBO C E I V = 0V --- --- V CES C BE I I = --- --- V EBO C I V = 50V I --- --- 2 CES CE E DYNAMICDYNAMIC Test Conditions Typ. P - P = 1.5W V = 50V --- --- W OUT IN CC G - P = 1.5W V = 50V --- --- dB P IN CC - P = 1.5W V = 50V --- --- % IN CC C Conditions: Pulse Width = 10 IMPEDANCE DATAIMPEDANCE DATA FREQ Z ( ) Z ( ) IN CL 3.0 + j5.0 5.8 + j7.5 3.8 + j7.5 3.3 + j8.5 2.5 + j20.0 6.0 + j8.9 V = 50V CC P = 1.5W IN direct. or contact our factory WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein 1150 MHz 1090 MHz 1025 MHz Sec Duty Cycle = 1% 30 1150 MHz f =1025 10 1150 MHz f =1025 15 1150 MHz f =1025 Max. Min. Unit Symbol Value mA = 0mA E 3.5 0mA = 1mA BV 65 = 25mA BV 65 = 0mA = 10mA BV Max. Min. Unit Symbol Value 9855 9840 1013 18936

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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