MPSH11 / MMBTH11 MPSH11 MMBTH11 C E TO-92 C E B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift common- base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSH11 *MMBTH11 P Total Device Dissipation 350 225 mW D Derate above 25C 2.8 1.8 mW/C R Thermal Resistance, Junction to Case 125 C/W JC R Thermal Resistance, Junction to Ambient 357 556 C/W JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 MPSH11/MMBTH11, Rev. B 2002 Fairchild Semiconductor CorporationMPSH11 / MMBTH11 NPN RF Transistor (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Sustaining Voltage* I = 1.0 mA, I = 0 25 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 30 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 3.0 V (BR)EBO E C I Collector Cutoff Current V = 25 V, I = 0 100 nA CBO CB E I Emitter Cutoff Current V = 2.0 V, I = 0 100 nA EBO EB C ON CHARACTERISTICS h DC Current Gain I = 4.0 mA, V = 10 V 60 FE C CE Collector-Emitter Saturation Voltage I = 4.0 mA, I = 0.4 mA 0.5 V V C B CE(sat) Base-Emitter On Voltage I = 4.0 mA, V = 10 V 0.95 V V C CE BE(on) SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product I = 4.0 mA, V = 10 V, 650 MHz T C CE f = 100 MHz C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.7 pF CB E cb Common-Base Feedback Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.6 0.9 pF C rb CB E Collector Base Time Constant I = 4.0 mA, V = 10 V, 9.0 pS rb c C CB f = 31.8 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 3 Typical Characteristics Collector-Emitter Saturation DC Current Gain Voltage vs Collector Current vs Collector Current 0.2 300 V = 5V CE = 10 250 0.15 125 C C 125 200 150 0.1 25 25 100 - 40 C 0.05 50 - 40 C 0 0.01 0.1 1 10 100 0.1 1 10 20 30 I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C C MPSH11/MMBTH11, Rev. B FE CESAT h - DC PULSED CURRENT GAIN V - COLLECTOR-EMITTER VOLTAGE (V)