MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW05, MPSW06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MPSW05 60 C B MPSW06 80 Emitter Base Breakdown Voltage V 4.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I Adc CES (V = 40 Vdc, I = 0) MPSW05 0.5 CE B (V = 60 Vdc, I = 0) MPSW06 0.5 CE B Collector Cutoff Current I Adc CBO (V = 40 Vdc, I = 0) MPSW05 0.1 CB E (V = 60 Vdc, I = 0) MPSW06 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 3.0 Vdc, I = 0) 0.1 EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 50 mAdc, V = 1.0 Vdc) 80 C CE (I = 250 mAdc, V = 1.0 Vdc) 60 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 250 mAdc, I = 10 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 250 mAdc, V = 5.0 Vdc) 1.2 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 200 mAdc, V = 5.0 Vdc, f = 20 MHz) 50 C CE Output Capacitance C pF obo (V = 10 V, f = 1.0 MHz) 12 CB 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 400 T = 125C J V = 1.0 V CE 200 25C -55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain