SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP F = 1.9 GHZ, VCE = 3.6 V, Class AB, PACKAGE OUTLINE 39 Duty 1/8 +0.2 2.8 -0.3 4 PIN MINI MOLD PACKAGE: NE68939 +0.10 +0.2 0.4 -0.05 1.5 -0.1 (LEADS 2, 3, 4) 2 3 2.9 0.2 0.95 1.9 0.85 4 1 1) Collector DESCRIPTION +0.10 2) Emitter 0.6 -0.05 3) Base The NE68939 is a low voltage, NPN Silicon Bipolar Tran- sistor for pulsed power applications. The device is designed 4) Emitter to operate from a 3.6 V supply, and deliver over 1/4 watt of +0.2 1.1 0.8 -0.1 +0.10 power output at frequencies up to 2.0 GHZ with a 1:8 duty 0.16 -0.06 cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini- 5 5 0 to 0.1 mold package and is available on tape and reel. The NE68939 transistors are manufactured to stringent quality assurance standards to ensure highest reliability and consistent superior performance. ELECTRICAL CHARACTERISTICS (TA = 25 C) PART NUMBER NE68939 PACKAGE CODE 39 SYMBOLS PARAMETERS UNITS MIN TYP MAX ICBO Collector Cutoff Current, VCB = 5 V, IE = 0 A 2.5 IEBO Emitter Cutoff Current, VEB = 1 V, IC = 0 A 2.5 hFE DC Current Gain, VCE = 3.6 V, IC = 100 mA 30 P-1 Output Power dBm 24.5 VCE = 3.6 V, f = 1.9 GHZ Gp Power Gain dB 6.5 8 ICq = 2 mA (Class AB) Duty 1/8 Collector Efficiency % 50 62 C TON Maximum Device On Time MS 10.0NE68939 1 OUTLINE 39 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) RECOMMENDED P.C.B. LAYOUT SYMBOLS PARAMETERS UNITS RATINGS 2.4 VCBO Collector to Base Voltage V 9.0 VCEO Collector to Emitter Voltage V 6.0 3 2 VEBO Emitter to Base Voltage V 2.0 IC Collector Current mA 150 PT Total Power Dissipation mW 200 (CW) Tj Junction Temperature C 150 1.9 TSTG Storage Temperature C -65 to +150 Note: 1.0 1. Operation in excess of any one of these parameters may result in permanent damage. 1 4 1.0 APPLICATION (1) TX Amplifier for DECT ORDERING INFORMATION PART NUMBER QTY +3 dBm Po = 27 dBm NE68939-T1-A 3K/REEL Note: 1. Lead material: Cu NE68839 NE68939 NE69039 Lead plating: PbSn (2) TX Amplifier for PHS -14 dBm P1 = 22 dBm ZIN (), ZOUT () DATA j50 PC2771T NE68939 NE69039 j100 j25 OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT j10 AND POWER GAIN VS. INPUT POWER ZIN 30 0 0 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) 25 ZOUT -j10 Pout 20 80 -j100 C -j25 60 40 30 15 -j50 20 IC 20 10 0 0 10 8 7 GP 6 5 Z OUT 5 Z IN 4 5 10 15 20 25 Input Power, Pin (dBm) TYPICAL DATA IMPEDANCE LOOKING INTO DEVICE f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 VCC = 3.6 V, ICQ = I mA, CLASS AB P1dB 24.5 dbm FREQUENCY ZIN ZOUT (GHZ) () () C 62 % IC 15 mA 1.9 7.85+j5.62 21.9-j11.6 GL 9.0 db 0.9 3.1+j11.6 5.3-j5.7 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: