X-On Electronics has gained recognition as a prominent supplier of PRF957,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. PRF957,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

PRF957,115 NXP

PRF957,115 electronic component of NXP
PRF957,115 NXP
PRF957,115 RF Bipolar Transistors
PRF957,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. PRF957,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar NPN 10V 100MA 8.5GHZ
Datasheet: PRF957,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1005
5 : USD 0.1003
50 : USD 0.0977
500 : USD 0.0918
2500 : USD 0.0892
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.3913
10 : USD 0.2713
100 : USD 0.1253
1000 : USD 0.0954
3000 : USD 0.0818
9000 : USD 0.0746
24000 : USD 0.0738
45000 : USD 0.0738
99000 : USD 0.0707
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PRF957,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PRF957,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PRF957 UHF wideband transistor Product specication 1999 Jul 23 Supersedes data of 1999 Mar 01Philips Semiconductors Product specication UHF wideband transistor PRF957 FEATURES PINNING Small size PIN DESCRIPTION Low noise 1 base Low distortion 2 emitter High gain 3 collector Gold metallization ensures excellent reliability. 3 handbook, halfpage APPLICATIONS 3 Communication and instrumentation systems. 1 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 2 1 2 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog Top view MAM062 and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. Marking code: W2. Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C feedback capacitance I = 0 V =6V f=1MHz - 0.4 - pF re C CB f transition frequency I = 30 mA V =6V f = 1 GHz - 8.5 - GHz T C CE m G maximum unilateral power gain I = 30 mA V =6V - 15 - dB UM C CE T =25 C f = 1 GHz amb NF noise gure = I = 5 mA V =6V - 1.3 - dB S opt C CE f = 1 GHz P total power dissipation T =60 C note 1 -- 270 mW tot s R thermal resistance from junction P = 270 mW -- 425 K/W th j-s tot to soldering point Note 1. T is the temperature at the soldering point of the collector pin. s 1999 Jul 23 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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