BZV55C5V1 Microchip

ZENER DIODES BZV55 C2V4 thru LEADLESS PACKAGE FOR SURFACE MOUNT BZV55 C75 DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C Power Derating: 3.33 mW / C above +50C Forward Voltage: 200mA: 1.1 Volts maximum ELECTRICAL CHARACTERISTICS 25C, unless otherwise specified. MAXIMUM MAXIMUM TYPE ZENER VOLTAGE DIFFERENTIAL REVERSE (NOTE 1) RESISTANCE CURRENT V I r I I V Z ZT diff Z R R VOLTS mA OHMS mA A VOLTS MIN MAX MILLIMETERS INCHES BZV55 C2V4 2.2 2.6 5 100 5 50 1 DIM MIN MAX MIN MAX BZV55 C2V7 2.5 2.9 5 100 5 20 1 D 1.60 1.70 0.063 0.067 BZV55 C3V0 2.8 3.2 5 95 5 10 1 BZV55 C3V3 3.1 3.5 5 95 5 5 1 F 0.41 0.55 0.016 0.022 BZV55 C3V6 3.4 3.8 5 90 5 5 1 G 3.30 3.70 .130 .146 BZV55 C3V9 3.7 4.1 5 90 5 3 1 G1 2.54 REF. .100 REF. BZV55 C4V3 4.0 4.6 5 90 5 3 1 BZV55 C4V7 4.4 5.0 5 80 5 3 2 S 0.03 MIN. .001 MIN. BZV55 C5V1 4.8 5.4 5 60 5 2 2 BZV55 C5V6 5.2 6.0 5 40 5 1 2 BZV55 C6V2 5.8 6.6 5 10 5 3 4 BZV55 C6V8 6.4 7.2 5 15 5 2 4 DESIGN DATA BZV55 C7V5 7.0 7.9 5 15 5 1 5 BZV55 C8V2 7.7 8.7 5 15 5 .700 5 BZV55 C9V1 8.5 9.6 5 15 5 .500 6 CASE: DO-213AA, Hermetically sealed BZV55 C10 9.4 10.6 5 20 5 .200 7 BZV55 C11 10.4 11.6 5 20 5 .100 8 glass case. (MELF, SOD-80, LL34) BZV55 C12 11.4 12.7 5 25 5 .100 8 BZV55 C13 12.4 14.1 5 30 5 .100 8 LEAD FINISH: Tin / Lead BZV55 C15 13.8 15.6 5 30 5 .050 10.5 BZV55 C16 15.3 17.1 5 40 5 .050 11.2 BZV55 C18 16.8 19.1 5 45 5 .050 12.6 THERMAL RESISTANCE: (R ): OJEC BZV55 C20 18.8 21.2 5 55 5 .050 14.0 100 C/W maximum at L = 0 inch BZV55 C22 20.8 23.3 5 55 5 .050 15.4 BZV55 C24 22.8 25.6 5 70 5 .050 16.8 THERMAL IMPEDANCE: (Z ): 35 OJX BZV55 C27 25.1 28.9 2 80 2 .050 18.9 BZV55 C30 28.0 32.0 2 80 2 .050 21.0 C/W maximum BZV55 C33 31.0 35.0 2 80 2 .050 23.1 BZV55 C36 34.0 38.0 2 90 2 .050 25.2 POLARITY: Diode to be operated with BZV55 C39 37.0 41.0 2 130 2 .050 27.3 the banded (cathode) end positive. BZV55 C43 40.0 46.0 2 150 2 .050 30.1 BZV55 C47 44.0 50.0 2 170 2 .050 32.9 BZV55 C51 48.0 54.0 2 180 2 .050 35.7 MOUNTING SURFACE SELECTION: BZV55 C56 52.0 60.0 2 200 2 .050 39.2 BZV55 C62 58.0 66.0 2 215 2 .050 43.4 The Axial Coefficient of Expansion BZV55 C68 64.0 72.0 2 240 2 .050 47.6 (COE) Of this Device is Approximately BZV55 C75 70.0 79.0 2 255 2 .050 52.2 +6PPM/C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This NOTE 1 Nominal Zener voltage is measured with the device junction in thermal Device. equilibrium at an ambient temperature of 25C + 3C. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 165 WEBSITE: X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Zener Diodes category: Click to view products by Microsemi manufacturer: Other Similar products are found below : MMSZ5245BS-7-F RKZ13B2KG P1 RKZ5.6B2KJ R1 EDZTE6113B EDZTE6116B EDZTE616.8B 1N747A 1N966B NTE5116A NTE5121A NTE5139A NTE5147A NTE5152A NTE5156A NTE5164A JANS1N4974US SMAJ4764A-TP RKZ5.1BKU P6 3SMAJ5946B-TP 3SMAJ5950B-TP 3SMBJ5920B-TP 3SMBJ5925B-TP TDZTR24 441774C MMSZ4678-TP BZG04-36 BZG05C9V1- HE3-TR HZM30NBTR-E UDZTE-175.1B 3SMAJ5945B-TP 3SMAJ5947B-TP 3SMBJ5941B-TP DL4746A-TP RKZ18B2KK R1 RKZ10B2KL R1 RKZ6.8B2KL R1 RKZ8.2B2KL R1 DZ2S240M0L SMAZ27-TP SMBZ5920B-E3/52 ZMM3.0 RD16UM-T1-A RD39S- T1-A RD9.1S-T1-A RD10S-T1-A RD20S-T1-A RD2.2S-T1-A RD2.7UM-T1-A HZM24NB1TL-E HZM2.7NB2TL-E