X-On Electronics has gained recognition as a prominent supplier of BFY90 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFY90 RF Bipolar Transistors are a product manufactured by Central Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFY90 Central Semiconductor

BFY90 electronic component of Central Semiconductor
BFY90 Central Semiconductor
BFY90 RF Bipolar Transistors
BFY90  Semiconductors

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See Product Specifications
Part No. BFY90
Manufacturer: Central Semiconductor
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors . .
Datasheet: BFY90 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.975 ea
Line Total: USD 6.98 
Availability - 1774
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1774
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 6.975
10 : USD 4.422
25 : USD 4.411
100 : USD 3.817
2000 : USD 3.795
4000 : USD 3.773

   
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We are delighted to provide the BFY90 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFY90 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFX89 BFY90 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTORS The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 30 V CER Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 2.5 V EBO Continuous Collector Current I 25 mA C Peak Collector Current (f>1.0MHz) I 50 mA CM Power Dissipation P 200 mW D Power Dissipation (T=25C) P 300 mW C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 875 C/W JA Thermal Resistance 583 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A BFX89 BFY90 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS I V =15V - - 10 - - 10 nA CBO CB BV I=10A 30 - - 30 - - V CBO C BV I =1.0mA, R =50 30 - - 30 - - V CER C BE BV I=1.0mA 15 - - 15 - - V CEO C BV I=10A 2.5 - - 2.5 - - V EBO E h V =1.0V, I=2.0mA 20 - 150 25 - 150 FE CE C h V =1.0V, I=25mA 20 - 125 20 - 125 FE CE C f V =5.0V, I=2.0mA, f=500MHz - 1.0 - 1.0 1.1 - GHz T CE C f V =5.0V, I=25mA, f=500MHz - 1.2 - 1.3 1.4 - GHz T CE C C V =10V, I=0, f=1.0MHz - - 1.7 - - 1.5 pF ob CB E C V =5.0V, I=2.0mA, f=1.0MHz - 0.6 - - 0.6 0.8 pF re CE C G V =10V, I =8.0mA, f=200MHz - 19 22 - - - dB pe CE C G V =10V, I=8.0mA, f=800MHz - - 7.0 - - - dB pe CE C G V =10V, I=14mA, f=200MHz - - - 21 23 - dB pe CE C G V =10V, I=14mA, f=800MHz - - - - 8.0 - dB pe CE C R4 (13-March 2014)BFX89 BFY90 SILICON NPN RF TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A BFX89 BFY90 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS NF V =5.0V, I =2.0mA, f=100kHz - - - - - 4.0 dB CE C NF V =5.0V, I =2.0mA, f=200MHz - 3.3 4.0 - 2.5 3.5 dB CE C NF V =5.0V, I =2.0mA, f=500MHz, R=50 - - 6.5 - - 5.0 dB CE C G NF V =5.0V, I =2.0mA, f=800MHz - 7.0 - - 5.5 - dB CE C P V =10V, I =8.0mA, f=205MHz - 6.0 - - - - mW o CE C P V =10V, I =14mA, f=205MHz - - - 10 12 - mW o CE C TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector 4) Case MARKING: FULL PART NUMBER R4 (13-March 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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