PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon www.onsemi.com Features Complement to PZTA42T1G SOT223 PACKAGE NSV Prefix for Automotive and Other Applications Requiring PNP SILICON Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS SURFACE MOUNT Compliant COLLECTOR 2,4 MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit BASE 1 CollectorEmitter Voltage V 300 Vdc CEO CollectorBase Voltage V 300 Vdc CBO EmitterBase Voltage V 5.0 Vdc EMITTER 3 EBO Collector Current I 500 mAdc C 4 Total Power Dissipation P W D up to T = 25C (Note 1) 1.5 1 A 2 3 Storage Temperature Range T 65 to +150 C stg SOT223 Junction Temperature T 150 C CASE 318E J STYLE 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in mounting pad for the collector lead = 0.93 sq in. AYW THERMAL CHARACTERISTICS P2D Characteristic Symbol Max Unit 1 Thermal Resistance, R C/W JA JunctiontoAmbient (Note 2) 83.3 P2D = Specific Device Code A = Assembly Location 2. Device mounted on a FR4 glass epoxy printed circuit board Y = Year 1.575 in x 1.575 in x 0.0625 in mounting pad for the collector lead = 0.93 sq in. W = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping PZTA92T1G, SOT223 1,000 / Tape & Reel NSVPZTA92T1G (PbFree) NSVPZTA92T3G SOT223 4,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2017 Rev. 11 PZTA92T1/DPZTA92T1G, NSVPZTA92T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 300 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 300 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 100 Adc, I = 0) 5.0 E C Collector-Base Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) 0.25 CB E EmitterBase Cutoff Current I Adc EBO (V = 3.0 Vdc, I = 0) 0.1 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 25 C CE (I = 10 mAdc, V = 10 Vdc) 40 C CE (I = 30 mAdc, V = 10 Vdc) 40 C CE Saturation Voltages Vdc (I = 20 mAdc, I = 2.0 mAdc) V 0.5 C B CE(sat) (I = 20 mAdc, I = 2.0 mAdc) V 0.9 C B BE(sat) DYNAMIC CHARACTERISTICS CollectorBase Capacitance f = 1.0 MHz C pF cb (V = 20 Vdc, I = 0) 6.0 CB E CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 50 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test Conditions, t = 300 s, 0.02. p 300 V = 10 Vdc CE T = +125C J 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain www.onsemi.com 2 h , DC CURRENT GAIN FE