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X-On Electronics has gained recognition as a prominent supplier of PZTA42T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PZTA42T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PZTA42T1G ON Semiconductor

PZTA42T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.PZTA42T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 1.5 W Surface Mount SOT-223 (TO-261)
Datasheet: PZTA42T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.1312 ea
Line Total: USD 131.2 
Availability - 97000
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
97000
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.1312
3000 : USD 0.1261
5000 : USD 0.1243
8000 : USD 0.1215
25000 : USD 0.1172
50000 : USD 0.1146
100000 : USD 0.1129
150000 : USD 0.1113

363750
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.1529
2000 : USD 0.1274
10000 : USD 0.1186
25000 : USD 0.1177

13555
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 9
Multiples : 1
9 : USD 0.5478
15 : USD 0.3503
25 : USD 0.344
100 : USD 0.2262
250 : USD 0.224
500 : USD 0.1949
1000 : USD 0.1815
3000 : USD 0.1679
6000 : USD 0.1545

2057
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2377
50 : USD 0.1883
150 : USD 0.1607
1000 : USD 0.1442
2000 : USD 0.1299
5000 : USD 0.1222

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PZTA42T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PZTA42T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon www.onsemi.com Features PZTA42T1G is Complement to PZTA92T1G SOT223 PACKAGE S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON Site and Control Change Requirements AECQ101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS SURFACE MOUNT Compliant COLLECTOR 2, 4 MAXIMUM RATINGS (T = 25C unless otherwise noted) C BASE Rating Symbol Value Unit 1 CollectorEmitter Voltage V Vdc CEO (Open Base) 300 EMITTER 3 CollectorBase Voltage V Vdc CBO (Open Emitter) 300 4 EmitterBase Voltage V Vdc EBO (Open Collector) 6.0 1 2 3 Collector Current (DC) I 500 mAdc C SOT223 Total Power Dissipation P W D CASE 318E T = 25C (Note 1) 1.5 A STYLE 1 Storage Temperature Range T 65 to +150 C stg MARKING DIAGRAM Junction Temperature T 150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AYW 1. Device mounted on a FR4 glass epoxy printed circuit board P1D 1.575 in x 1.575 in x 0.0625 in mounting pad for the collector lead = 0.93 sq in. 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit P1D = Specific Device Code A = Assembly Location Thermal Resistance, R C/W JA Y = Year JunctiontoAmbient (Note 2) 83.3 W = Work Week 2. Device mounted on a FR4 glass epoxy printed circuit board = PbFree Package 1.575 in x 1.575 in x 0.0625 in mounting pad for the collector lead = 0.93 sq in. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping PZTA42T1G SOT223 1,000 / Tape & Reel (PbFree) SPZTA42T1G SOT223 1,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2017 Rev. 12 PZTA42T1/DPZTA42T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 300 C B Collector-Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 300 C E Emitter-Base Breakdown Voltage V Vdc (BR)EBO (I = 100 Adc, I = 0) 6.0 E C Collector-Base Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) 0.1 CB E Emitter-Base Cutoff Current I Adc EBO (V = 6.0 Vdc, I = 0) 0.1 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 25 C CE (I = 10 mAdc, V = 10 Vdc) 40 C CE (I = 30 mAdc, V = 10 Vdc) 40 C CE DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 50 C CE Feedback Capacitance C pF re (V = 20 Vdc, I = 0, f = 1.0 MHz) 3.0 CB E Collector-Emitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) 0.5 C B Base-Emitter Saturation Voltage V Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) 0.9 C B 3. Pulse Test Conditions, t = 300 s, 0.02. p 120 V = 10 Vdc CE T = +125C J 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain www.onsemi.com 2 h , DC CURRENT GAIN FE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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