DATA SHEET www.onsemi.com NPN Darlington Transistor MARKING DIAGRAM C PZTA29 E AYW C A29 B Description SOT223 This device is designed for applications requiring extremely high CASE 318H current gain at collector currents to 500 mA. Sourced from process 03. A = Assembly Location YW = Date Code Features A29 = Specific Device Code These are PbFree Devices ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A ORDERING INFORMATION (Note 1, Note 2) Device Package Shipping Symbol Parameter Value Unit PZTA29 SOT223 4000 / Tape & Reel V CollectorEmitter Voltage 100 V CES For information on tape and reel specifications, V CollectorBase Voltage 100 V CBO including part orientation and tape sizes, please V EmitterBase Voltage 12 V refer to our Tape and Reel Packaging Specification EBO Brochure, BRD8011/D. I Collector Current Continuous 800 mA C T , T Operating and Storage Junction 55 to + 150 C J STG Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steadystate limits. onsemi should be consulted on application involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Max Unit P Total Device Dissipation 1000 mW D Derate Above 25 C 8.0 mW/ C Thermal Resistance, Junction to Ambient 125 R C/W JA 3. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for 2 the collector lead minimum 6cm . Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2021 Rev. 2 PZTA29/DPZTA29 ELECTRICAL CHARACTERISTICS (Note 4) (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Max Unit OFF CHARACTERISTICS V CollectorEmitter Breakdown Voltage I = 100 A, V = 0 100 V (BR)CES C BE V CollectorBase Breakdown Voltage 100 V I = 100 A, I = 0 (BR)CBO C E V EmitterBase Breakdown Voltage I = 10 A, I = 0 12 V (BR)EBO E C I Collector CutOff Current V = 80 V, I = 0 100 nA CBO CB E I Collector CutOff Current V = 80 V, V = 0 500 nA CES CE BE I Emitter CutOff Current V = 10 V, I = 0 100 nA EBO EB C ON CHARACTERISTICS h DC Current Gain I = 10 mA, V = 5.0 V 10,000 FE C CE I = 100 mA, V = 5.0 V 10,000 C CE V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 0.01 mA 1.2 V CE C B I = 100 mA, I = 0.1 mA 1.5 C B V BaseEmitter On Voltage I = 100 mA, V = 5.0 V 2.0 V BE(on) C CE SMALL SIGNAL CHARACTERISTICS f Current Gain Bandwidth Product I = 15 mA, V = 5.0 V, f = 100 MHz 125 MHz T C CE C Output Capacitance V = 1.0 V, I = 0, f = 1.0 MHz 8.0 pF obo CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test: pulse width 300 s, duty cycle 2.0%. www.onsemi.com 2