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This literature is subject to all applicable copyright laws and is not for resale in any manner.TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor December 2014 TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit Features C Monolithic Construction with Built-in Base-Emitter Shunt Resistors B High DC Current Gain: h = 1000 V = -4 V, I = -3 A (Minimum) FE CE C Collector-Emitter Sustaining Voltage TO-220 1 Low Collector-Emitter Saturation Voltage R1 R2 1.Base 2.Collector 3.Emitter Industrial Use E Complementary to TIP102 Ordering Information Part Number Top Mark Package Packing Method TIP105 TIP105 TO-220 3L (Single Gauge) Bulk TIP105TU TIP105 TO-220 3L (Single Gauge) Rail TIP107 TIP107 TO-220 3L (Single Gauge) Bulk TIP107TU TIP107 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP105 -60 V Collector-Base Voltage V CBO TIP107 -100 TIP105 -60 V Collector-Emitter Voltage V CEO TIP107 -100 V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -8 A C I Collector Current (Pulse) -15 A CP I Base Current (DC) -1 A B T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP105 / TIP107 Rev. 1.1.0