TM 1200V XPT IGBT V = 1200V IXYN100N120C3 CES TM GenX3 I = 84A C110 V 3.50V CE(sat) t = 110ns fi(typ) High-Speed IGBT E for 20-50 kHz Switching SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 175C 1200 V CES J E V T = 25C to 175C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 160 A C25 C E I T = 110C 84 A C110 C C I T = 25C, 1ms 460 A CM C I T = 25C 50 A G = Gate, C = Collector, E = Emitter A C either emitter terminal can be used as E T = 25C 1.2 J AS C Main or Kelvin Emitter SSOA V = 15V, T = 150C, R = 1 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 830 W C C Features T -55 ... +175 C J T 175 C Optimized for Low Switching Losses JM Square RBSOA T -55 ... +175 C stg Isolation Voltage 2500V~ V 50/60Hz t = 1min 2500 V~ Positive Thermal Coefficient of ISOL I 1mA t = 1s 3000 V~ Vce(sat) ISOL Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in. d High Current Handling Capability Terminal Connection Torque 1.3/11.5 Nm/lb.in. International Standard Package Weight 30 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 1200 V High Frequency Power Inverters CES C GE UPS V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Motor Drives SMPS I V = V , V = 0V 10 A CES CE CES GE PFC Circuits T = 150C 1.25 mA J Battery Chargers I V = 0V, V = 20V 100 nA Welding Machines GES CE GE Lamp Ballasts V I = 100A, V = 15V, Note 1 2.96 3.50 V CE(sat) C GE T = 150C 3.78 V J 2018 IXYS CORPORATION, All Rights Reserved DS100405C(4/18)IXYN100N120C3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4950 pF ies C V = 25V, V = 0V, f = 1MHz 356 pF oes CE GE C 120 pF res Q 260 nC g(on) Q I = I , V = 15V, V = 0.5 V 47 nC ge C C110 GE CE CES Q 102 nC gc t 27 ns d(on) t 110 ns Inductive load, T = 25C ri J E 12.00 mJ I = I , V = 15V on C C110 GE t 120 ns V = 0.5 V , R = 1 d(off) CE CES G t 110 ns fi Note 2 E 4.90 mJ off t 27 ns d(on) Inductive load, T = 125C t 116 ns J ri I = I , V = 15V E 15.00 mJ C C110 GE on t V = 0.5 V , R = 1 146 ns CE CES G d(off) t 125 ns Note 2 fi E 6.15 mJ off R 0.18 C/W thJC R 0.05 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537