High Speed IGBT IXSH 30N60B2D1 V = 600 V CES IXST 30N60B2D1 with Diode I = 48 A C25 V = 2.5 V CE(sat) Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V C (TAB) GEM G C E I T = 25C48A C25 C I T = 110C30A C110 C I 28 A TO-268 (IXST) F(110) I T = 25C, 1 ms 90 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 48 A GE J G CM (RBSOA) Clamped inductive load 0.8 V CES G E C (TAB) t V = 15 V, V = 360 V, T = 125C 10 s SC GE CE J (SCSOA) R = 10 , non repetitive G P T = 25C 250 W C C G = Gate C = Collector E = Emitter TAB = Collector T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg International standard package Weight TO-247 6 g Guaranteed Short Circuit SOA TO-268 5 g capability Low V Maximum lead temperature for soldering 300 C CE(sat) - for low on-state conduction losses 1.6 mm (0.062 in.) from case for 10 s High current handling capability Maximum tab temperature for soldering for 10s 260 C MOS Gate turn-on - drive simplicity Fast fall time for switching speeds up to 20 kHz Symbol Test Conditions Characteristic Values Applications (T = 25C, unless otherwise specified) J AC motor speed control min. typ. max. Uninterruptible power supplies (UPS) Welding V I = 750 A, V = V 4.0 7.0 V GE(th) C CE GE I V = V 150 A Advantages CES CE CES V = 0 V 1 mA High power density GE I V = 0 V, V = 20 V 100 nA GES CE GE V I = 24A, V = 15 V 2.5 V CE(sat) C GE DS99249(10/04) 2004 IXYS All rights reservedIXSH 30N60B2D1 IXST 30N60B2D1 Symbol Test Conditions Characteristic Values TO-247 (IXSH) Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 24A V = 10 V, Note 1 7.0 12.0 S fs C CE 1 2 3 C 1220 pF ies C V = 25 V, V = 0 V 110 pF oes CE GE f = 1 MHz 20N60B2D1 140 pF C 42 pF res Q 50 nC g Terminals: 1 - Gate 2 - Drain Q I = 24A, V = 15 V, V = 0.5 V 23 nC ge C GE CE CES Dim. Millimeter Inches Q 15 nC gc Min. Max. Min. Max. A 4.7 5.3 .185 .209 Inductive load, T = 25C t 30 ns J d(on) A 2.2 2.54 .087 .102 1 I = 24A, V = 15 V A 2.2 2.6 .059 .098 t 30 ns C GE 2 ri V = 400 V, R = 5 b 1.0 1.4 .040 .055 CE G t 130 280 ns d(off) b 1.65 2.13 .065 .084 Switching times may increase for V 1 CE b 2.87 3.12 .113 .123 2 t (Clamp) > 0.8 V , higher T or 140 300 ns fi CES J C .4 .8 .016 .031 increased R E G 0.55 1.0 mJ D 20.80 21.46 .819 .845 off E 15.75 16.26 .610 .640 t 30 ns e 5.20 5.72 0.205 0.225 d(on) L 19.81 20.32 .780 .800 Inductive load, T = 125C t 50 ns J L1 4.50 .177 ri P 3.55 3.65 .140 .144 I = 24 A, V = 15 V E 20N60B2 0.32 mJ C GE on Q 5.89 6.40 0.232 0.252 V = 400 V, R = 5 20N60B2D1 0.82 mJ CE G Switching times may increase for t 202 ns d(off) V (Clamp) > 0.8 V , higher T TO-268 (IXST) Outline CE CES J t 234 ns or increased R fi G E 1.18 mJ off R 0.50 K/W thJC R 0.21 K/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 30A, V = 0 V T =150C 1.6 V F F GE J 2.5 V I I = 50A, V = 0 V, -di /dt = 100 A/s T = 100C 2.0 2.5 A RM F GE F J t V = 100 V T = 100C 150 ns rr R J t I = 1 A -di/dt = 100 A/s V = 30 V 30 ns rr F R R 0.9 K/W thJC Note 1: Pulse test, t 300 s, duty cycle d 2 % IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463