X-On Electronics has gained recognition as a prominent supplier of NGB8245NT4G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGB8245NT4G IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGB8245NT4G ON Semiconductor

NGB8245NT4G electronic component of ON Semiconductor
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Part No.NGB8245NT4G
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors IGBT 20A, 450V NCHANNEL
Datasheet: NGB8245NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.5443
10 : USD 1.2782
25 : USD 1.2367
100 : USD 1.0174
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5443
10 : USD 1.2782
25 : USD 1.2367
100 : USD 1.0174
N/A

Obsolete
0
MOQ : 800
Multiples : 800
800 : USD 0.8962
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.8413
10 : USD 0.9963
100 : USD 0.835
500 : USD 0.6839
800 : USD 0.6829
N/A

Obsolete
   
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We are delighted to provide the NGB8245NT4G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGB8245NT4G and other electronic components in the IGBT Transistors category and beyond.

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Ignition IGBT Surface Mount > 450V > NGB8245N 2 Pb NGB8245N - 20 A, 450 V, N-Channel Ignition IGBT, D PAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and OverVoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug and DriveronCoil Applications 2 D PAK Package Offers Smaller Footprint for Increased Board Space 20 Amps, 450 Volts GateEmitter ESD Protection VCE(on) 1.24 V Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load IC = 15 A, VGE 4.0 Low Threshold Voltage for Interfacing Power Loads to Maximum Ratings (T = 25C unless otherwise noted) J Logic or Microprocessor Devices Low Saturation Voltage Rating Symbol Value Unit High Pulsed Current Capability CollectorEmitter Voltage V 500 V CES This is a PbFree Device Applications Gate Voltage V 500 V CER Ignition Systems GateEmitter Voltage V 15 V GE Functional Diagram 20 A Collector CurrentContinuous DC I C T = 25C Pulsed 50 A C AC Continuous Gate Current I 1.0 mA G Transient Gate Current I 20 mA G (t 2 ms, f 100 Hz) ESD (Human Body Model) ESD 8.0 kV R = 1500 , C = 100 pF ESD (Machine Model) ESD 500 V R = 0 , C = 200 pF Additional Information 150 W Total Power Dissipation T = 25C C P D Derate above 25C 1.0 W/C 55 Operating and Storage T , T to C Samples Datasheet Resources J stg Temperature Range +175 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/25/18Ignition IGBT Surface Mount > 450V > NGB8245N Unclamped CollectorToEmitter Avalanche Characteristics Rating Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, Pk I = 9.5 A, R = 1 k, L = 3.5 mH, Starting T = 150C E mJ CC GE L G C AS 158 Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction-to-Case R 1.0 C/W JC Thermal Resistance, Junction-to-Ambient (Note 1) R 62.5 C/W JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 275 C L 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/25/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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