APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E is achieved off through leading technology silicon design and lifetime control processes. A reduced E - off V tradeoff results in superior ef ciency compared to other IGBT technologies. Low CE(ON) gate charge and a greatly reduced ratio of C /C provide excellent noise immunity, short res ies delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of APT102GA60L the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Very Low E for maximum ef ciency Half bridge off Ultra low C for improved noise immunity High power PFC boost res Low conduction loss Welding Low gate charge UPS, solar, and other inverters Increased intrinsic gate resistance for low EMI High frequency, high ef ciency industrial RoHS compliant Absolute Maximum Ratings Symbol Parameter Ratings Unit Collector Emitter Voltage 600 V V ces 1 I Continuous Collector Current T = 25C 183 C1 C A I Continuous Collector Current T = 100C 102 C2 C 2 I Pulsed Collector Current 307 CM 3 V Gate-Emitter Voltage 30 V GE P Total Power Dissipation T = 25C 780 W D C SSOA Switching Safe Operating Area T = 150C 307A 600V J T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for Soldering: 0.063 from Case for 10 Seconds 300 L Static Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit V Collector-Emitter Breakdown Voltage V = 0V, I = 250A 600 BR(CES) GE C V = 15V, T = 25C 2.0 2.5 J GE V V Collector-Emitter On Voltage CE(on) I = 62A T = 125C 1.9 C J V Gate Emitter Threshold Voltage V =V , I = 2.5mA 3 4.5 6 GE(th) GE CE C V = 600V, T = 25C 1000 CE J I Zero Gate Voltage Collector Current A CES V = 0V T = 125C 5000 GE J I Gate-Emitter Leakage Current V = 30V 100 nA GES GS Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance - - 0.16 C/W JC W Package Weight - 5.9 - g T Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw inlbf 10 Microsemi Website - APT102GA60B2 L Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 8170 ies C Output Capacitance 630 V = 0V, V = 25V pF oes GE CE C Reverse Transfer Capacitance 78 f = 1MHz res 4 Q Total Gate Charge Gate Charge 294 g Q Gate-Emitter Charge V = 15V 56 ge GE nC V = 300V 106 CE Q Gate- Collector Charge gc I = 62A C 5 T = 150C, R = 4.7 , V = 15V, 307 J G GE SSOA Switching Safe Operating Area A L= 100uH, V = 600V CE t Turn-On Delay Time Inductive Switching (25C) IGBT and Diode 28 d(on) t Current Rise Time V = 400V 37 r CC ns t Turn-Off Delay Time V = 15V 212 d(off) GE t Current Fall Time I = 62A 101 f C 5 E Turn-On Switching Energy 1354 R = 4.7 on2 G J 7 1614 E Turn-Off Switching Energy T = +25C off J Inductive Switching (125C) IGBT and Diode t Turn-On Delay Time 27 d(on V = 400V t Current Rise Time 37 CC r ns V = 15V t Turn-Off Delay Time 247 GE d(off) t Current Fall Time I = 62A 142 C f 5 E Turn-On Switching Energy R = 4.7 2106 G on2 J 7 E Turn-Off Switching Energy T = +125C 1852 J off 1 Continuous current limited by package lead temperature. 2 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 3 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 4 See Mil-Std-750 Method 3471. 5 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 6 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 7 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6329 Rev C 6 - 2011